Analytical modeling of the CMOS-like a-Si:H TFT inverter circuit

Chung, Ki-Woong; Neudeck, G.W.; Bare, H.F.

doi:10.1109/4.1023

Cited by 9 publications

(3 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…One of the attempts was to construct CMOS-like circuits by using similar ambipolar transistors, where the N-FETs and P-FETs were realized with the exchange of the supply voltage (V dd ) and ground, which were demonstrated by ambipolar amorphous silicon earlier, and then grafted to ambipolar organic film and carbon nanotubes. [67,265,266] As shown in Figure 8a, a V dd of +5 V was applied on the source (S) of the transistor (Tr1), which was equivalent to a −5 V voltage to the gate relative to the source of Tr1, leading to an effective gate bias shifted by −5 V in the characteristic curve. However, the source in Tr2 was grounded and Tr2 served as a normal ambipolar FET.…”

Section: Circuits Structure Engineeringmentioning

confidence: 99%

Ambipolar 2D Semiconductors and Emerging Device Applications

Sheng

Hou

et al. 2020

Small Methods

View full text Add to dashboard Cite

the emergence of nanoscience and technology. Reviewing the history over the past 60 years, new devices based on new materials and new physics have been driving the development of integration circuits (ICs) along the Moore's law. Therefore, it has always been a frontier to explore new materials and novel physical properties that can help to push forward the development of ICs. In addition, currently, the multiple requirements for ICs are becoming increasingly important, such as flexible, transparent, and wearable. Just in this context, graphene, an ultrathin graphitic layer with a honeycomb structure, has aroused a wide attention since its discovery, which was demonstrated as a metallic transistor and proposed for high-frequency electronic circuits. [1] Due to its outstanding electronic, optical and mechanical properties, graphene was highly expected as a material to meet the increasing requirements for high-performance flexible, transparent and wearable electronic and optoelectronic devices. [2-8] The emergence of graphene inspired researchers to look for other 2D materials from van der Waals solids (VDWSs) since the one-atomic-layer graphene was revealed to be thermodynamically stable under ambient conditions. Up to now, 2D atomic crystals have been found in various VDWSs like hexagonal boron nitride (hBN), black phosphorus (BP), metal dichalcogenides (MDCs, like MoS 2 , WSe 2 , MoTe 2 , SnS 2 , and so on), and layered oxide, the basic of which can be seen in hundreds of reviews. [9-16] These graphene-like 2D materials are the thinnest crystals with the thickness usually less than 1 nm. They often exhibit distinctive properties different from conventional bulk materials. For example, bulk MoS 2 is of indirect bandgap but the monolayer is of direct one; [17,18] the bandgap of few layer semiconducting 2D layers often increases with the thickness decreasing, and can be modulated by electric field; [19-23] theoretical calculations indicate that the sunlight absorptivity of MDC monolayers like MoS 2 , MoSe 2 , and WS 2 is up to 5-10% that is 1 order higher than Si and GaAs, enabling them promising for ultrathin optoelectronic devices. [24] Besides, the 2D family covers a wide conductive range from metals, semimetals, semiconductors to insulators, offering a possibility to construct ultrathin devices totally based on 2D crystals. [25-27] And, as the study continues With the rise of 2D materials, new physics and new processing techniques have emerged, triggering possibilities for the innovation of electronic and optoelectronic devices. Among them, ambipolar 2D semiconductors are of excellent gate-controlled capability and distinctive physical characteristic that the major charge carriers can be dynamically, reversibly and rapidly tuned between holes and electrons by electrostatic field. Based on such properties, novel devices, like ambipolar field-effect transistors, lightemitting transistors, electrostatic-field-charging PN diodes, are developed and show great advantages in logic and reconfigurable circuits, integrate...

show abstract

Section: Circuits Structure Engineeringmentioning

confidence: 99%

Ambipolar 2D Semiconductors and Emerging Device Applications

Sheng

Hou

et al. 2020

Small Methods

View full text Add to dashboard Cite

show abstract

“…Ambipolar thin-film transistors based on amorphous silicon (a-Si:H) have been utilized in complementary metal-oxide-semiconductor (CMOS) integrated circuits for decades. [1][2][3] With the development of organic semiconductors, ambipolar charge transport in organic fieldeffect transistors (OFETs) has been studied since 1996. 4,5 Ambipolar organic field-effect transistors in which both holes and electrons could be efficiently injected showed potential applications in the CMOS-like inverters and organic light-emitting transistors.…”

mentioning

confidence: 99%

“…3(b), our device showed hole and electron mobilities of 1.40 Â 10 À2 and 8.69 Â 10 À3 cm 2 V À1 s À1 , respectively. These fieldeffect mobilities (m) were calculated in the saturation regime by using the following equation: 2 , where I D is the drain current, m is the field-effect mobility, C i is the gate dielectric capacitance, W and L are the channel width and length, respectively, and V T is the threshold voltage.…”

mentioning

confidence: 99%