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A new approach for measuring the thermal resistance of power field-effect transistors (FETs) with extremely high spatial resolution below 40 nm has been demonstrated using cathodoluminescence generated by a low-energy electron beam. The energy shift of the fundamental bandgap caused by the current heating in the channel region is spatially probed, and is converted to the channel temperature using the temperature dependence of the material bandgap. The obtained thermal resistances of the GaAs metal semiconductor field effect transistor (MESFET) and the GaN MESFET are compared with those measured by the conventional electrical technique.

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A new analytic model for amorphous silicon thinfilm transistors Accurate analytical expressions have been derived, from basic principles, for the sheet conductance of the n-channel a-Si:H thin-film transistors. The basic principles apply two different energy band models, one for the a-Si bulk and one for the a-Si-Si0 2 interface. The physical parameters needed for the model are easily obtained from an experimental sheet conductance versus the gate voltage curve. The basic expressions for the sheet conductance are then simplified and result in two sets of simple formulas which are employed in the calculation of the I D VS V D characteristics.