Analytical modeling of <i>a</i>-Si:H thin-film transistors

Chung, Ki-Woong; Neudeck, G.W.

doi:10.1063/1.339007

Cited by 16 publications

(3 citation statements)

References 7 publications

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“…Theoretical studies of ambipolar transport in FETs were performed for hydrogenated amorphous silicon (a-Si:H) [37,38] where ambipolar transport was observed for the first time [39]. Those models were useful for describing measured characteristics but not for the extraction of microscopic transport parameters.…”

Section: Analytical Modelmentioning

confidence: 99%

Ambipolar charge carrier transport in mixed organic layers of phthalocyanine and fullerene

Opitz

Bronner

Bruetting

2007

Journal of Applied Physics

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Articles you may be interested inAmbipolar pentacene/ C 60 -based field-effect transistors with high hole and electron mobilities in ambient atmosphere Appl. Phys. Lett. 94, 023305 (2009); 10.1063/1.3072608 High-performance and electrically stable C 60 organic field-effect transistors Appl. Phys. Lett. 91, 092114 (2007); 10.1063/1.2778472 Ambipolar organic field-effect transistors fabricated using a composite of semiconducting polymer and soluble fullerene Appl. Phys. Lett. 89, 153505 (2006); 10.1063/1.2361269 Ambipolar operation of fullerene field-effect transistors by semiconductor/metal interface modificationMixed layers of copper-phthalocyanine ͑p-conductive͒ and fullerene ͑n-conductive͒ are used for the fabrication of organic field-effect transistors ͑OFET͒ and inverters. Regarding the electrical characteristics of these donor-acceptor blends they show ambipolar charge carrier transport, whereas devices made from only one of the materials show unipolar behavior. Such mixed films are model systems for ambipolar transport with adjustable field-effect mobilities for electrons and holes. By variation of the mixing ratio it is possible to balance the transport of both charge-carrier types. In this paper we discuss the variation of mobility and threshold voltage with the mixing ratio and demonstrate ambipolar inverters as a leadoff application. The gained results were analyzed by simulations using an analytical model for ambipolar transistors and subsequently compared to complementary inverters.

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Section: Analytical Modelmentioning

confidence: 99%

Ambipolar charge carrier transport in mixed organic layers of phthalocyanine and fullerene

Opitz

Bronner

Bruetting

2007

Journal of Applied Physics

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“…[26][27][28][29][30] It is based on the distribution of transport and localized states in amorphous silicon. [26][27][28][29][30] It is based on the distribution of transport and localized states in amorphous silicon.…”

Section: Amorphous-silicon Modelmentioning

confidence: 99%

“…An analytical model for the corresponding modification of the Shockley model has been derived in Refs. It is well known that such phenomenon occurs in thin-film transistors (TFT) with amorphous-silicon (a-Si) as the active layer (often simply denoted either as TFT model or as a-Si model), [26][27][28][29][30] which are used in active-matrix displays. 16 Models that include the field dependence of the mobility have been discussed in Refs.…”

Section: Introductionmentioning

confidence: 99%

Influence of distributed trap states on the characteristics of top and bottom contact organic field-effect transistors

2004

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Numerical simulations of organic field-effect transistors (OFET) of bottom and top contact (BOC, TOC) design with different source/drain contacts were carried out considering an exponential distribution of trap states in the gap of the active layer (a-Si model). For ohmic contacts, the current-voltage characteristics are similar to the trap-free case and there is not much difference between the two designs. However, the currents are lower due to immobile trapped charges, the threshold voltage is shifted, and the inverse subthreshold slope increases due to trap recharging. An analytical approximation for the effective mobility deviates from the simulation up to 20%. For low source/drain work function, there occur particular dependencies of the current on the gate voltage for the two designs, which are explained with the internal concentration and field profiles. A series resistance between source and channel causes in the TOC structure an abrupt transition from the gate voltage independent active region into saturation. In the BOC case, the reverse-biased Schottky-type source contact dominates the current. Through simulation of measured characteristics of prepared OFETs based on a modified poly-(phenylene-vinylene), the observed hysteresis is analyzed.

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Homojunction Field-Effect and Bipolar Transistors

Požela

1993

Physics of High-Speed Transistors

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Analytical modeling of a-Si:H thin-film transistors

Cited by 16 publications

References 7 publications

Ambipolar charge carrier transport in mixed organic layers of phthalocyanine and fullerene

Ambipolar charge carrier transport in mixed organic layers of phthalocyanine and fullerene

Influence of distributed trap states on the characteristics of top and bottom contact organic field-effect transistors

Homojunction Field-Effect and Bipolar Transistors

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