Modeling of ambipolar a-Si:H thin-film transistors

Ambipolar Oxide Thin‐Film Transistor

“…[ 21 ] In this case, a clear inversion characteristic is observed in the transfer curve in Figure 2 a upon applying a positive V GS . In contrast, for the TFTs with thicker channels, no clear inversion characteristic is observed in the transfer curves.…”

Ambipolar a-SiGe:H thin-film transistors fabricated at 200°C

“…Several models have been reported in the literature in order to characterize the ambipolar behavior of the TFTs from the transfer and output characteristics [4][5][6]. In the sake of simplicity, we use the method proposed by [4] to obtain the most important parameters of the ambipolar TFTs.…”

“…This makes mandatory the use of expensive substrates which leads to a more expensive fabrication process. The fabrication of ambipolar transistors calls for both, the formation of source and drain ohmic contacts (metal-semiconductor interface), and the use of a high-quality gate insulator (insulator-semiconductor interface) [4][5][6]. The electrical parameters of the TFTs depend directly on the quality of the insulator-semiconductor interface [7].…”

High hole and electron mobilities in nanocrystalline silicon thin-film transistors

“…As the I DS further increases, the dominant carriers now become electrons. The exponential increase in the I DS therefore stems from the contribution of electron current [19]. This description is schematically depicted in the inset in Fig.…”

“…In addition, it is observed that the OFF-leakage current (I OFF-leakage ) exponentially increases at higher reverse V GS for both the p-channel and n-channel TFTs, which is typical of ambipolar TFT operation [17,19]. This behavior is attributed to the contribution of electrons and holes accumulated in the p-and the n-channels under the reverse V GS , respectively, due to injection from the Cr drain [17].…”