An accurate CAD model for the ambipolar a-Si: H TFT

Neudeck, G.W.; Chung, Ki-Woong; Bare, H.F.

doi:10.1109/t-ed.1987.23008

Cited by 18 publications

(9 citation statements)

References 9 publications

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“…The difference in flat-band voltages, for the n-type and p-type regions, is due to the trapping and detrapping of charge carriers between the a-SiGe:H film and the SOG insulator [14]. Electrons are trapped in the n-type region and holes are trapped in the p-type region.…”

Section: Discussionmentioning

confidence: 99%

Ambipolar a-SiGe:H thin-film transistors fabricated at 200°C

Dominguez

Rosales

Torres

et al. 2012

Journal of Non-Crystalline Solids

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Section: Discussionmentioning

confidence: 99%

Ambipolar a-SiGe:H thin-film transistors fabricated at 200°C

Dominguez

Rosales

Torres

et al. 2012

Journal of Non-Crystalline Solids

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“…31,32 Other authors have used numerical simulations based on ͑ambipolar͒ amorphous silicon theory 33 to model OFETs.…”

Section: ͑10͒mentioning

confidence: 99%

Ambipolar charge transport in organic field-effect transistors

et al. 2006

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A model describing charge transport in disordered ambipolar organic field-effect transistors is presented. The basis of this model is the variable-range hopping in an exponential density of states developed for disordered unipolar organic transistors. We show that the model can be used to calculate all regimes in unipolar as well as ambipolar organic transistors, by applying it to experimental data obtained from ambipolar organic transistors based on a narrow-gap organic molecule. The threshold voltage was determined independently from metal insulator semiconductor diode measurements. An excellent agreement between theory and experiment is observed over a wide range of biasing regimes and temperatures.

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“…Many researchers have tried to find a relation for G s and use it in a model to find the output characteristics. For example, Neudeck et al [12] derived an expression for G s as where a is a function of the slope of the straight line portion of the ln( I D ) versus V G curve, b is an arbitrary constant that depends on the carrier mobility, temperature, and devise geometry, and C is related to the density of states in the mobility gap and device geometry. Figure 2 shows the relations of G s ( v ).…”

Section: Theoretical Analysismentioning

confidence: 99%

“…Due to the difficulty of applying a certain mathematical formula for many types of MOS transistors fabricated using a:Si thin‐film techniques, such as TFT and ISFET [8,13], a new mathematical model is suggested that depends in principle on (4) and on the work of Neudeck et al [12].…”

Section: Theoretical Analysismentioning

confidence: 99%

Output characteristics model for an a‐Si ISFET pH sensor

Hashim

Sidek

2011

IEEJ Transactions Elec Engng

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A mathematical model for the calculation of the output characteristics of amorphous silicon hydrogenated (a‐Si:H) ion‐sensitive field‐effect transistors (ISFET) is developed, which depends on the integration of the conductivity channel versus gate voltage curve at fixed drain voltage. Single curve integration was changed to integration with many simple lines to obtain the ID − VD characteristics using computer programming. The results of this model were tested with those of experiments. © 2011 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.

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An accurate CAD model for the ambipolar a-Si: H TFT

Cited by 18 publications

References 9 publications

Ambipolar a-SiGe:H thin-film transistors fabricated at 200°C

Ambipolar a-SiGe:H thin-film transistors fabricated at 200°C

Ambipolar charge transport in organic field-effect transistors

Output characteristics model for an a‐Si ISFET pH sensor

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