Analytical Modeling of the Transistor Laser

Effects of Quantum-Well Base Geometry on Optoelectronic Characteristics of Transistor Laser

“…The opposite dependence of BW and to W EQW , is a trade-off between TL optoelectronic characteristics. Other experimental and theoretical works proved the described "trade-off" between and f -3db as well (Then et al, ),(faraji et al, 2009. They also predict analytically the above mentioned direct dependence of f -3db on τ B,spon .…”

“…Optical gain is also assumed independent on photon and carrier populations. Although the difference in final results is negligible, an interested reader can refer to (Faraji et al, 2009) for more information. In equations (13) and (14) the parameter B,spon is a specific value of overall base recombination lifetime, B , evaluated in spontaneous emission region at lasing threshold.…”

Theoretical analysis of the damping effect on a transistor laser

“…Some of the diffused carriers are captured; these are recombined in the QWs, while the rest are diffused to the collector (J C ) and removed. The small-signal response of a TL has been discussed in previous studies [9,12]. For a common base (CB) configuration, response ΔS/ΔJ E was originally described [12] using…”

“…Previous studies have provided experimental data relating to electrical and current gain [2,3,4,5,6,7] for TLs operating in the continuous wave (CW) mode; recently, CW operation using a 1.3-μm AlGaInAs/InP quantum well active region has also been reported [8]. Theoretical studies have also returned results including a primary analytical model that expands upon the carrier transport model [9,10,11,12], an equivalent TL circuit model [11], and a large-signal analysis that clearly describes the differences in the operational mechanisms of LDs and TLs [12]. Although these reports all indicate that a larger TL modulation bandwidth could be achieved by carrier pulling in a transistor, they do not discuss the relationship between the magnitude of the carrier pulling and the modulation bandwidth.…”

Spectral characteristics of a 1.3-µm npn-AlGaInAs/InP transistor laser under various operating conditions

“…Owing to its three-terminal structure, the TL can achieve output power control with different spectral characteristics compared with conventional lasers by applying a collector-base voltage. In addition, the TL has the potential to break the modulation speed limitations inherent in conventional LDs because shorter carrier recovery times can be achieved [5,6,7,8,9,10]. Until now, several studies on the 0.98-µm TLs have been have been conducted [11,12,13].…”