Analytical modelling of 200 GHz SiGe HBT high-frequency noise parameters

Abstract

This paper presents an analytical model for high-frequency noise of high-speed SiGe heterojunction bipolar transistors (HBTs). The model allows circuit level noise parameters to be obtained: the minimum noise figure, the noise resistance and the optimum admittance for different bias and frequencies up to 64 GHz, including the quasi-saturation effect. The noise parameters are determined directly from y-parameters. The analytical model is verified through comparison with TCAD simulation results of the noise parameters using the field impedance method as well as with measured data. The paper also reviews for 200 GHz SiGe HBTs the latest y-parameters-based analytical noise models. Their bias and frequency dependence is calculated and compared with device simulation.

Hydrodynamic device simulation of 200 GHz SiGe heterojunction bipolar transistors

“…In two previous papers [3,4], we used ATLAS simulation tool [5] to do a comparative study of emitter width effect on β F , f T and f max and to verify a new analytical model for high-frequency noise of realistic 200 GHz SiGe-HBTs [6].…”