Analytical Procedure for the Extraction of Material Parameters in Antiferroelectric ZrO₂

Abstract

Here, we present an analytical procedure to extract the anisotropy constants of antiferroelectric (AFE) materials from a few key features of the experimental polarization versus field curves. Our approach is validated for two experimental datasets of ZrO 2 capacitors, and the extracted parameters are consistent with the microscopically nonpolar nature of the zero-field state of the AFE ZrO 2 . The methodology has applications in AFE nonvolatile memories and memristors, as well as in electron devices exploiting the negative capacitance (NC) operation of ZrO 2 .

Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies

“…Hence, in these devices, the interplay between the charge trapping, the stabilization and the compensation of the ferroelectric polarization becomes quite delicate [40]. The non-hysteretic polarization switching in MFDM structures has been investigated also in the context of the negative-capacitance (NC) operation [24], [30], [41], [42], recently involving also the antiferroelectric ZrO 2 [43], [44].…”