Analytical study of electrical performance of SiGe-based n-p-p solar cells with BaSi2 BSF structure

Evaluating the performance of efficient Cu2NiSnS4 solar cell—A two stage theoretical attempt and comparison to experiments

“…It can further be found that FF is somewhat decreased for further increasing the HTL thickness, this is because of the increase in resistance at back surface in the heterojunction. This behaviors in PV parameters as a function of HTL thickness have consistency with a slight variations in device outputs realized when the thickness of back surface passivation layer is varied in the range from 0.05 to 0.3 μm in the previous researches [ 12 , 43 , 44 , [77] , [78] , [79] ]. Hence, in this study, a thin HTL with thickness of 0.1 μm is selected to avoid cost and recombination as the thick HTL in the PV cell demands more materials and offers high contact resistance for carrier transmission.…”

Performance evaluation of ZnSnN2 solar cells with Si back surface field using SCAPS-1D: A theoretical study

“…On the other hand, in the case of a thin ZnSnN 2 solar cell with a thickness of w p = 1 μm, a P + -P junction is formed by incorporating a BSF layer (p + -Si) between the absorber layer ( p -ZnSnN 2 ) and the rear side of the cell. This configuration results in a significant electric field strength of approximately 3.56 MV/cm, as determined through a SCAPS software analysis [ 61 , 62 ]. This information is visually represented in Fig.…”

The impact of annealing on the optoelectronic properties of tin selenide thin films for photovoltaics

“…The graph of absorption coefficient measured in cm -1 on y-axis and wavelength λ measured in nm on x-axis give us absorption coefficient which is given by the following relation [20].…”