Analytical threshold voltage model for short channel double-gate SOI MOSFETs

Universal Potential Model in Tied and Separated Double-Gate MOSFETs With Consideration of Symmetric and Asymmetric Structure

“…After the parabolic approximation was first used by Young [1] for single-gate SOI MOSFETs, Yan et al [2] and Suzuki et al [3]- [6] extended it for double-gate (DG) MOSFETs. Suzuki et al applied the parabolic potential to symmetric DG MOSFETs (n+/n+ and p+/p+ gate) [3], [4] as well as asymmetric DG MOSFETs (n+/p+ gate) [5], [6]. However, previous expressions for the potential are different forms for different structures.…”

“…Obtaining a closed form of potential distribution models is crucial to evaluate the device characteristics depending on device and process parameters. From the closed form, a guideline for device scalability, referred to as "scaling theory," was proposed [2], [3], [6]. According to the scaling theory, short-channel effects could be optimized if the minimum gate length satisfied the condition of L g ≥ 2αλ, where L g is the gate length, α is a constant, and λ is the characteristic length.…”

An Analytical Model for Deriving the 3-D Potentials and the Front and Back Gate Threshold Voltages of a Mesa-Isolated Small Geometry Fully Depleted SOI MOSFET

“…The threshold voltage is very crucial parameter since it can estimate several features of a MOSFET such as channel conductance, drain saturation voltage/current, turn-on/off speed, etc. Recently, by extending the twodimensional (2-D) analytical models [7][8][9][10][11][12][13] up to threedimensional (3-D) analysis, 3-D models [14][15][16][17] for the threshold voltage have been suggested. However, employed 2-D analytical models were somewhat oversimplified in the sense that the potentials in both front and back oxide layers were derived by using the gradual channel approximation (GCA), the potential in the silicon body was derived by decomposing it into a 1-D Poisson's equation and a 2-D Laplace's equation.…”

Nanowires: Promising Candidates for Electrostatic Control in Future Nanoelectronic Devices

“…We can, by analogy to (Suzuki & al., 1996), distinguish two different terms. The first one (independent from the channel length) refers to the long-channel threshold voltage V th,long ; the second term, which tends to zero for long channel length, represents the threshold voltage roll-off and describes the impact of SCE/DIBL:…”

“…Consequently, this model includes both the impact of quantum confinement on the long channel and the threshold voltage roll-off. The most common model (such as references (Banna & al., 1995;Suzuki & al., 1996)) does not include the effect of quantum confinement on the evolution of the short channel effect in analytical modeling which becomes dominant in nanoscale device such as nanowire (this aspect will be detailed later in paragraph 4). The threshold voltage roll-off is represented in figure 7 for nanowire diameters of 5 nm (calculated in the classical case, i.e.…”