Analytical Transmission Electron Microscopy

Abstract

Chemical analysis at high spatial resolution is the domain of analytical transmission electron microscopy. Owing to rapid instrumental developments during the past decade, electron energy-loss spectroscopy offers now a spatial resolution close to 0.1 nm and an energy resolution close to 0.1 eV. This development has been accompanied by the introduction of numerous new techniques and methods for data acquisition and analysis, which are outlined in the present article. Recent results for a wide range of material systems are addressed. These comprise first-principles calculations, which have contributed to enormous progress in the calculation of near-edge fine structures, and fingerprinting methods, which are still important for the interpretation of experimental data.

TEM-EELS study of low-friction superlattice TiAlN/VN coating: the wear mechanisms

“…The structure of the L2,3 absorption edge changes as the oxidation state varies, and changes from metallic state to oxide [11]. The double-peak structure of the Ti-L2,3 and V-L2,3 can be seen in Figures 5-7 and is illustrated in Figure 8.…”

“…Among these techniques, transmission electron microscopy (TEM) is known to have the best spatial resolution for imaging and the multiple capabilities of chemical and structural analyses. In particular, the complementary techniques of energy dispersive X-ray spectrometry (EDX) and electron energy loss spectrometry (EELS) provide opportunity of both qualitative and quantitative chemical analyses to nanometer scale [11,12]. Despite these advantages, however, only limited literatures of TEM based wear mechanism study are available.…”

Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire. II. Electron energy loss spectroscopic study

“…1(d)], is generally attributed to the presence of a high density of oxygen molecules. 10 It is well known that point defects act as preferential sites for trapping oxygen atoms and nucleation centers for the formation of oxygen bubbles during the electron irradiation in the TEM. 10 Point defects can be generated in the course of the ion implantation or by ion bombardment during TEM specimen preparation by FIB.…”

“…10 It is well known that point defects act as preferential sites for trapping oxygen atoms and nucleation centers for the formation of oxygen bubbles during the electron irradiation in the TEM. 10 Point defects can be generated in the course of the ion implantation or by ion bombardment during TEM specimen preparation by FIB. In the former case, the PG regions will contain more point defects because, as stated above, the regions correspond to the scratch regions in the as-implanted sapphire, which are likely to be damaged more severely than other regions during the ion implantation.…”

Advanced Electron Microscopy Techniques on Semiconductor Nanowires: from Atomic Density of States Analysis to 3D Reconstruction Models

“…In order to reduce the source energy spread, monochromators have been recently introduced. Nowadays, the monocromators yield a beam current in the order of several 100 pA (Tsuno, 2000;Egerton, 2003;Sigle, 2005). In particular, and due to all these achievements, HREELS associated to STEM in HRHAADF mode, can be used to solve the local electronic properties in nanostructured materials.…”