Analyzing the current crowding effect induced by oxygen adsorption of amorphous InGaZnO thin film transistor by capacitance–voltage measurements

Huang, Sheng-Yang; Chang, Ting‐Chang; Chen, Min-Chen; Jian, Fu-Yen; Chen, Shih-Cheng; Chen, Te-Chih; Jheng, Jang-Cheng; Lou, Mei-Jheng; Yeh, F. S.

doi:10.1016/j.sse.2011.11.005

Cited by 7 publications

(4 citation statements)

References 15 publications

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“…Figure 8 indicates that the output curves obtained from the pristine, Ni-capped, and Pt-capped SnO TFTs exhibit an excellent behavior with a clear pinch-off. However, severely distorted output curves were measured from the Al-capped SnO TFT, which can be attributed to the impeded carrier transport due to the additional energy barrier induced via the depletion layer formed by the Al capping layer [ 49 ]. Moreover, the slight current crowding phenomenon from the output curve measured from the Cr-capped SnO TFT can be observed, which indicates the probability of a shallow depletion region formed below the capping layer in the Cr-capped SnO TFT.…”

Section: Resultsmentioning

confidence: 99%

Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

et al. 2020

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In this study, the effects of capping layers with different metals on the electrical performance and stability of p-channel SnO thin-film transistors (TFTs) were examined. Ni- or Pt-capped SnO TFTs exhibit a higher field-effect mobility (μFE), a lower subthreshold swing (SS), a positively shifted threshold voltage (VTH), and an improved negative-gate-bias-stress (NGBS) stability, as compared to pristine TFTs. In contrast, Al-capped SnO TFTs exhibit a lower μFE, higher SS, negatively shifted VTH, and degraded NGBS stability, as compared to pristine TFTs. No significant difference was observed between the electrical performance of the Cr-capped SnO TFT and that of the pristine SnO TFT. The obtained results were primarily explained based on the change in the back-channel potential of the SnO TFT that was caused by the difference in work functions between the SnO and various metals. This study shows that capping layers with different metals can be practically employed to modulate the electrical characteristics of p-channel SnO TFTs.

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Section: Resultsmentioning

confidence: 99%

Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

et al. 2020

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“…Part of the drain voltage may drop on the parasitic resistance. 38 Due to the limitation of our setup, all the electrical characteristic measurements were performed under ambient condition. Oxygen may be adsorbed on the top of the channel and form a depletion layer.…”

Section: Resultsmentioning

confidence: 99%

Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimizing Channel Structure

Chen

Han

Zhang

et al. 2019

Sci Rep

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In this paper, we investigated the performance of thin-film transistors (TFTs) with different channel configurations including single-active-layer (SAL) Sn-Zn-O (TZO), dual-active-layers (DAL) In-Sn-O (ITO)/TZO, and triple-active-layers (TAL) TZO/ITO/TZO. The TAL TFTs were found to combine the advantages of SAL TFTs (a low off-state current) and DAL TFTs (a high mobility and a low threshold voltage). The proposed TAL TFTs exhibit superior electrical performance, e.g. a high on-off state current ratio of 2 × 108, a low threshold voltage of 0.63 V, a high field effect mobility of 128.6 cm2/Vs, and a low off-state current of 3.3 pA. The surface morphology and characteristics of the ITO and TZO films were investigated and the TZO film was found to be C-axis-aligned crystalline (CAAC). A simplified resistance model was deduced to explain the channel resistance of the proposed TFTs. At last, TAL TFTs with different channel lengths were also discussed to show the stability and the uniformity of our fabrication process. Owing to its low-processing temperature, superior electrical performance, and low cost, TFTs with the proposed TAL channel configuration are highly promising for flexible displays where the polymeric substrates are heat-sensitive and a low processing temperature is desirable.

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“…A few research groups have reported the fabrication of OFETs using individual single walled carbon nanotubes (SWNT) [10,12], randomly oriented SWNT network [13,14], and SWNT/polymer composite film [16,17] as electrodes. Many metals (such as Al, Cr, Mo and Ti) have been used as electrodes, where Cr and Ti were usually used as an adhesion layer for Au [18][19][20][21][22]2].…”

Section: Introductionmentioning

confidence: 99%

Charge Injection in Regioregular Poly-(3-Hexythiophene) Organic Field-Effect Transistors with Different Metal Electrodes

Zhang

Lin

Liao

2013

AMR

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Here we report on regioregular poly-(3-hexythiophene) (P3HT) organic field-effect transistors (OFETs) with various metal electrodes: pristine Au, pristine Cr, and Cr/Au. Compared to the performance of OFETs using different electrodes, the OFETs with Au electrode have better mobility (μ = 0.0090 cm2/Vs) and larger current at the same source-drain voltage and gate voltage. The enhancement of the device performance with Au electrode can be attributed to a small contact resistance and a small barrier height to P3HT for hole carrier injection.

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Analyzing the current crowding effect induced by oxygen adsorption of amorphous InGaZnO thin film transistor by capacitance–voltage measurements

Cited by 7 publications

References 15 publications

Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimizing Channel Structure

Charge Injection in Regioregular Poly-(3-Hexythiophene) Organic Field-Effect Transistors with Different Metal Electrodes

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