Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimizing Channel Structure

Abstract

In this paper, we investigated the performance of thin-film transistors (TFTs) with different channel configurations including single-active-layer (SAL) Sn-Zn-O (TZO), dual-active-layers (DAL) In-Sn-O (ITO)/TZO, and triple-active-layers (TAL) TZO/ITO/TZO. The TAL TFTs were found to combine the advantages of SAL TFTs (a low off-state current) and DAL TFTs (a high mobility and a low threshold voltage). The proposed TAL TFTs exhibit superior electrical performance, e.g. a high on-off state current ratio of 2 × 108, a low threshold voltage of 0.63 V, a high field effect mobility of 128.6 cm2/Vs, and a low off-state current of 3.3 pA. The surface morphology and characteristics of the ITO and TZO films were investigated and the TZO film was found to be C-axis-aligned crystalline (CAAC). A simplified resistance model was deduced to explain the channel resistance of the proposed TFTs. At last, TAL TFTs with different channel lengths were also discussed to show the stability and the uniformity of our fabrication process. Owing to its low-processing temperature, superior electrical performance, and low cost, TFTs with the proposed TAL channel configuration are highly promising for flexible displays where the polymeric substrates are heat-sensitive and a low processing temperature is desirable.

Facile synthesis of β-Ga2O3 based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides

“…Recrystallization through thermal annealing helps reduce oxygen-related charge traps and generally improves the quality of Ga 2 O 3 . As Ga and O atoms migrate under high-temperature annealing, the crystallinity of β-Ga 2 O 3 is enhanced [35,36]. The increase in the annealing temperature also promotes the linking of β-Ga 2 O 3 which helps for fewer defects and later expected to result in an enhanced performance from forming an interconnected network (β-Ga 2 O 3 networks) [21,37] in the sample as described in figures S2(a)-(d).…”

Synthesis of Silicon and Germanium Oxide Nanostructures via Photonic Curing; a Facile Approach to Scale Up Fabrication

“… [82] Photonic curing is rapidly gaining attention as a separate method to process material as well as in assisting various fabrication techniques. For example, sintering and functionalization of nanoparticles, processing of high‐temperature films on low‐temperature substrates, [83] processing of grids for organic cell applications, [84] synthesis of dielectrics for organic field‐effect transistors, [85] fabrication of metal oxide thin film transistors,[ 86 , 87 ] processing of oxide electronics and flexible electronics [88] have been achieved by using photonic curing. Photonic curing has been employed for the sintering of nanoparticles by heating the nanoparticles to the extent that they diffuse to form thin films.…”

MAX Phase Ti2AlN for HfO2 Memristors with Ultra‐Low Reset Current Density and Large On/Off Ratio

“…[13][14][15] High off-state current density amplifies power consumption leading to compromised performance and reliability, which poses difficulties for AI applications, particularly in edge devices and IoT environments. [16,17] Given the rising prominence of real-time, low-latency applications, addressing the issue of high off-state current density is of paramount importance for the development of energy-efficient and sustainable AI-powered solutions. Surmounting this challenge would not only promote broader AI integration but would also significantly contribute to the development of eco-friendly electronic systems.…”