Anchoring phthalocyanine molecules on the 6H-SiC(0001)3×3 surface

Baffou, Guillaume; Mayne, Andrew J.; Comtet, G.; Dujardin, Gérald; Sonnet, Philippe; Stauffer, Louise

doi:10.1063/1.2769761

Cited by 26 publications

(56 citation statements)

References 24 publications

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“…The development of these new concepts may lead to applications in multichannel nanoelectronic devices. For example, the sensitivity of each surface state conductance to the adsorption of various types of molecules can be very different, 33 thus offering the possibility to design a multichannel nanoelectronic device for gas sensing. The dark area corresponds to set points for which tunneling is not possible, thus inducing tip-surface contact.…”

Section: Discussionmentioning

confidence: 99%

State selective electron transport through electronic surface states of6H‐SiC(0001)‐3×3

et al. 2008

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We investigate charge transport through electronic surface states of the 6H-SiC͑0001͒-3 ϫ 3 surface. Three intrinsic surface states are located within the wide bulk band gap, in which two ͑S 1 and U 1 ͒ arise from strongly correlated electronic states and the third ͑S 2 ͒ has negligible electron correlation effects. Combined conductance and luminescence experiments with the scanning tunneling microscope show that the Mott-Hubbard surface states ͑S 1 and U 1 ͒ have a high resistance ͑1.0 G⍀͒, while the noncorrelated state ͑S 2 ͒ has a negligible resistance. Consequently, current can be selectively transported through any of these three surface states.

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Section: Discussionmentioning

confidence: 99%

State selective electron transport through electronic surface states of6H‐SiC(0001)‐3×3

et al. 2008

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“…Silicon carbide is a promising candidate for achieving electronic decoupling; with a wide indirect band gap of 3 eV, the SiC(0001)-3 × 3 surface reconstruction has no bulk electronic states over a broad energy range. Recent studies of the conjugated polyaromatic molecules H 2 Pc 35 and PTCDI 36,37 show that these molecules bind to the SiC(0001)-3 × 3 surface via a Diels-Alder cycloaddition reaction through the formation of two Si-N and Si-O bonds, respectively. However, the SiC(0001)-3 × 3 surface has three intrinsic surface states located within the bulk band gap.…”

Section: Introductionmentioning

confidence: 99%

STM imagery and density functional calculations of C60fullerene adsorption on the 6H-SiC(0001)-3×3 surface

et al. 2013

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Scanning tunneling microscopy (STM) studies of the fullerene COO molecule adsorbed on the silicon carbide SiC(0001)-3 X 3 surface, combined with density functional theory (DFT) calculations, show that chemisorption of individual CEO molecules occurs through the formation of one bond to one silicon adatom only in contrast to multiple bond formation on other semiconducting surfaces. We observe three stable adsorption sites with respect to the Si adatoms of the surface unit cell. Comprehensive DFT calculations give different adsorption energies for the three most abundant sites showing that van der Waals forces between the COO molecule and the neighboring surface atoms need to be considered. The COO molecules are observed to form small clusters even at low coverage indicating the presence of a mobile molecular precursor state and nonnegligible intermolecular interactions.

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“…These findings shed a new light on the physics and chemistry of fullerene adsorbed on the (3 × 3) reconstruction of SiC(0001). Indeed, other large, planar and pi-conjugated molecules are known to link to the SiC(0001)(3 × 3) through a pair of Si tetramers to keep the pi-conjugation throughout the molecule 71,72 . The single covalent bond model also explains why, in contrast to other Si surfaces, this system shows an unexpected high temperature desorption of the C 60 while leaving a clean reconstruction 21 .…”

Section: Discussionmentioning

confidence: 99%

Peculiar covalent bonding of C₆₀/6H-SiC(0 0 0 1)-(3 × 3) probed by photoelectron spectroscopy

Bocquet¹,

Giovanelli²,

Ksari³

et al. 2018

J. Phys.: Condens. Matter

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High resolution photoemission with synchrotron radiation was used to study the interface formation of a thin layer of C60 on 6H−SiC(0001)-(3 × 3), characterized by protruding Si-tetramers. The results show that C60 is chemisorbed by orbital hybridization between the highest-occupied molecular orbital (HOMO) and the pz orbital of Si adatom at the apex of the tetramers. The covalent nature of the bonding was inferred from core level as well as valence band spectra. The Si 2p spectra reveal that a large fraction (at least 45%) of the Si adatoms remain unbound despite the reactive character of the associated dangling bonds. This is consistent with a model in which each C60 is attached to the substrate through a single covalent C60-Si bond. A binding energy shift of the core levels associated with sub-surface Si or C atoms indicates a decrease of the SiC band bending caused by a charge transfer from the C60 molecules to the substrate via the formation of donor-like interface states.

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Anchoring phthalocyanine molecules on the 6H-SiC(0001)3×3 surface

Cited by 26 publications

References 24 publications

State selective electron transport through electronic surface states of6H‐SiC(0001)‐3×3

State selective electron transport through electronic surface states of6H‐SiC(0001)‐3×3

STM imagery and density functional calculations of C60fullerene adsorption on the 6H-SiC(0001)-3×3 surface

Peculiar covalent bonding of C₆₀/6H-SiC(0 0 0 1)-(3 × 3) probed by photoelectron spectroscopy

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Anchoring phthalocyanine molecules on the 6H-SiC(0001)3×3 surface

Cited by 26 publications

References 24 publications

State selective electron transport through electronic surface states of6H‐SiC(0001)‐3×3

State selective electron transport through electronic surface states of6H‐SiC(0001)‐3×3

STM imagery and density functional calculations of C60fullerene adsorption on the 6H-SiC(0001)-3×3 surface

Peculiar covalent bonding of C60/6H-SiC(0 0 0 1)-(3 × 3) probed by photoelectron spectroscopy

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Peculiar covalent bonding of C₆₀/6H-SiC(0 0 0 1)-(3 × 3) probed by photoelectron spectroscopy