Angle-resolved photo-emission from the cleaved (110) surface of cadmium telluride

Humphreys, T. P.; Srivastava, G. P.; Williams, R. H.

doi:10.1088/0022-3719/19/8/022

Cited by 31 publications

(10 citation statements)

References 25 publications

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“…Our calculated points are compared with those of other calculations 10 obtained with EPP that investigated the effect on the predicted rate assuming two different band structures. 20,21 This comparison makes clear the importance of employing an accurate band structure ͑such as sX-LDA FLAPW͒, to obtain reliable rates. The degree of agreement between these calculations and ours is reasonable, given that the band structure and some of the numerical approximations 10 made in the evaluation of matrix elements differ.…”

Section: ͑4͒mentioning

confidence: 95%

Impact ionization in GaAs: A screened exchange density-functional approach

Picozzi

Asahi

Geller³

et al. 2002

Phys. Rev. B

143

177

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NOTICEThis report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees, nor any of their contractors, subcontractors or their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or any third party's use or the results of such use of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise, does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States Government or any agency thereof or its contractors or subcontractors. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof.

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Section: ͑4͒mentioning

confidence: 95%

Impact ionization in GaAs: A screened exchange density-functional approach

Picozzi

Asahi

Geller³

et al. 2002

Phys. Rev. B

143

177

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“…It serves as an excellent substrate for epitaxial growth of other II-VI compounds such as Hg x Cd 1-x Te with a tunable band gap [6][7][8], and as a key parent material for the realization of the quantum spin Hall phase [9][10][11]. Experimental measurements of the bulk band structure of CdTe have been reported in previous studies [12][13][14][15][16][17][18][19][20], but only for the (100) and (110) surfaces. High-resolution band mapping of CdTe(111) is thus far lacking for this important technological face.…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic studies ofCdTe(111)bulk and surface electronic structure

Ren

Bian

et al. 2015

Phys. Rev. B

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“…Apart from the classic optical and transport measurements the most advanced experimental methods were applied to acquire detailed information about its bulk and surface electronic structure. The photoemission measurements [3][4][5][6][7][8] gave almost a complete scheme of the occupied bulk states. The results of theoretical calculations [5,6,[9][10][11] generally fit well the experimental data.…”

mentioning

confidence: 99%

“…The photoemission measurements [3][4][5][6][7][8] gave almost a complete scheme of the occupied bulk states. The results of theoretical calculations [5,6,[9][10][11] generally fit well the experimental data. In spite of charging effects which make such measurements impossible for undoped, as-grown CdTe of the high resistivity, some data on the empty surface states have also been obtained (for Ga-doped n-type crystals) by means of k-resolved inverse photoemission spectroscopy (KRIPES) [13].…”

mentioning

confidence: 99%

“…Particular interest is focused on their atomic and electronic surface structures. CdTe is one of the most popular subjects of the studies [3][4][5][6][7][8][9][10][11][12][13][14]. Apart from the classic optical and transport measurements the most advanced experimental methods were applied to acquire detailed information about its bulk and surface electronic structure.…”

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confidence: 99%

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Surface Related Electronic States on CdTe(110) Observed by Means of Optical Spectroscopy

1995

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Surface differential reflectivity together with photoemissioii and Auger electron spectroscopies have been applied to observe and identify optical transitions among surface related states on CdTe(110) surfaces. The strongest contributions to the band of optical transitions have been revealed at the photon energies of 2.8, 3.4, and 3.9 eV. Their correspondence to excitations from the occupied S1 band to the unoccupied U1 one at the Γ, Χ and Χ' points of the surface Brillouin zone is discussed. substrates and emerging projects of optoelectronic devices based on wide gap II-VI compounds directly implanted into Si-or III-V-based electronic circuits considerably intensifled investigations of II-VI semiconductor electronic structures. Particular interest is focused on their atomic and electronic surface structures. CdTe is one of the most popular subjects of the studies [3][4][5][6][7][8][9][10][11][12][13][14]. Apart from the classic optical and transport measurements the most advanced experimental methods were applied to acquire detailed information about its bulk and surface electronic structure. The photoemission measurements [3-8] gave almost a complete scheme of the occupied bulk states. The results of theoretical calculations [5,6,[9][10][11] generally fit well the experimental data. In spite of charging effects which make such measurements impossible for undoped, as-grown CdTe of the high resistivity, some data on the empty surface states have also been obtained (for Ga-doped n-type crystals) by means of k-resolved inverse photoemission spectroscopy (KRIPES) [13]. Some complementary information was deduced from electron energy loss spectra [14].In this paper we report our contribution to the investigation of CdTe surface properties. The CdTe(110) surface, cleaved under UHV conditions, was studied in situ by means of surface differential reflectivity (SDR), ultraviolet photoemission (UPS) and Auger electron (AES) spectroscopies. We applied SDR spectroscopy as a tool for determination of energy gaps between occupied and empty states.

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Angle-resolved photo-emission from the cleaved (110) surface of cadmium telluride

Cited by 31 publications

References 25 publications

Impact ionization in GaAs: A screened exchange density-functional approach

Impact ionization in GaAs: A screened exchange density-functional approach

Spectroscopic studies ofCdTe(111)bulk and surface electronic structure

Surface Related Electronic States on CdTe(110) Observed by Means of Optical Spectroscopy

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