Angle-resolved photoelectron spectroscopy on gate insulators

Hattori, Takeo; Nohira, Hiroshi; Shinagawa, Seiji; Hori, M.; Kase, M.; Maruizumi, Takuya

doi:10.1016/j.microrel.2006.03.003

Cited by 14 publications

(15 citation statements)

References 18 publications

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“…In 1.0-nm-thick SiON films formed by plasma nitridation, nitrogen atoms exist only within 0.25 nm of the SiON surface and at the Si-SiON interface. [17][18][19] This is consistent with the thermodynamic consideration where silicon nitride compounds such as Si 3 N 4 and Si 2 N 2 O are thermodynamically unstable in silicon dioxide (SiO 2 ). 3) Meanwhile, it is found in our previous study 8) that nitrogen atoms can diffuse into SiON films 1.5 nm away from the surface during the plasma nitridation of 2.5-nm-thick SiO 2 films.…”

Section: Introductionsupporting

confidence: 83%

“…The plasma nitridation rate of silicon oxide empirically follows the logarithmic dependence on the nitridation time t ($ log t) or the power law dependence on t ($t n , n ¼ 0:25 { 0:4). 18) However, the mechanism of plasma nitridation is not clarified yet. For thermal oxidation, oxide thickness is well analyzed using the Deal-Grove model, where the firstorder reaction of oxygen atoms takes place at the interface between Si and SiO 2 films.…”

Section: Plasma Nitridation Ratementioning

confidence: 99%

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Depth Profile of Nitrogen Atoms in Silicon Oxynitride Films Formed by Low-Electron-Temperature Microwave Plasma Nitridation

Murakawa

Ishizuka

Nakanishi

et al. 2010

Jpn. J. Appl. Phys.

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Angle-resolved photoelectron spectroscopy study was performed on the depth profile of nitrogen atoms in silicon oxynitride (SiON) films formed by the plasma nitridation of silicon dioxide using low-electron-temperature microwave plasma. The depth profile of nitrogen near the SiON surface was confirmed to increase and its peak position moves into SiON films with an increase in the nitridation time, which improves boron immunity. A new transport and reaction model of plasma nitridation is proposed to explain the time evolution of nitrogen concentration and its depth profile in the films. Here, the density of radical nitrogen atoms decreases exponentially with an increase in the distance from the surface, and the nitrogen concentration incorporated in the SiON film is approximately proportional to the logarithmic time of plasma nitridation. It was newly found that post-nitridation annealing strongly enhances the pile-up of nitrogen atoms at the Si–SiON interface owing to their diffusion from the inward tail of the nitrogen depth profile near the surface. It is deduced that the pile-up of nitrogen atoms induces Si–H bonds at the interface, which become the main trigger for the degradation of the negative bias temperature instability of p-channel metal–oxide–silicon transistors.

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Section: Introductionsupporting

confidence: 83%

Section: Plasma Nitridation Ratementioning

confidence: 99%

Depth Profile of Nitrogen Atoms in Silicon Oxynitride Films Formed by Low-Electron-Temperature Microwave Plasma Nitridation

Murakawa

Ishizuka

Nakanishi

et al. 2010

Jpn. J. Appl. Phys.

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“…(16)) and determining the effective N dose in these films. The N depth distributions determined by XPS agree quite well with the N depth profiles measured using ToF-SIMS [26] but do not agree with the N depth distributions measured by Hattori et al [30] using Angle-Resolved XPS. Although the process conditions for preparing the SiON films look very similar to the ones we used, the N depth distribution of all RTN films was identical while the N depth profile of the DPN films was inverted compared to the N profile we determined using XPS (Fig.…”

Section: Metrology Of N Dose and Profile In Sion Films Using Xpscontrasting

confidence: 73%

X-ray metrology for advanced microelectronics

Wyon

2010

Eur. Phys. J. Appl. Phys.

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Abstract. The recent development of bright X-ray sources, reliable X-ray focusing optics, large X-ray detectors and X-ray data modelling and processing, have improved X-ray techniques to the point where many are being introduced in MOS transistor manufacturing lines as new metrology methods. The fundamental X-ray physical properties, such as their small wavelength and their weak interaction with solid-state matter satisfy basic in-line metrology requirements: non-destructiveness, speed, accuracy, reliability and long-term stability. The capability of X-ray based metrology methods to monitor critical 65 and 45 nm processes such as ion implant, nitrided SiO2 gate dielectrics, NiSi, Cu/porous low-κ interconnects and MIM capacitors is highlighted in this paper.

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“…. The N 1s spectra can be fitted with two components . A first peak N1 located at 396.8 eV associated with nitrogen linked to two silicon atoms from the substrate (Si linked to Si) and the second one N3 located at 397.6 eV associated with nitrogen linked to silicon from SiO 2 (Si linked to oxygen).…”

Section: Resultsmentioning

confidence: 99%

Depth profiling analysis of HfON on SiON ultrathin films by parallel angle resolved x‐ray photoelectron spectroscopy and medium energy ion scattering

Fauquier

Pelissier

Jalabert

et al. 2016

Surface & Interface Analysis

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The high-k metal gate (HKMG) film stacks introduced because 32 nm node of complementary metal oxide semiconductor (CMOS) is one major case where composition determination is mandatory. In this work, two high-resolution chemical depth profiling characterization techniques, the parallel angle-resolved X-ray photoelectron spectroscopy (pARXPS) and the medium energy ion scattering (MEIS), are used to determine with accuracy the composition of HfON/SiON (high-k/interfacial layer) stack from the 14 nm node technology. The pARXPS measurements reveal that the nitrogen distribution presents a gradient toward the Si substrate, and the MEIS results show that there is no interfacial HfSiON layer between the HfON and the SiON layers. Moreover, these two techniques show that the HfON layer is sub-stoichiometric. The combination of the information obtained from both pARXPS and MEIS was actually found very valuable to determine undoubtedly the chemical profile.

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Angle-resolved photoelectron spectroscopy on gate insulators

Cited by 14 publications

References 18 publications

Depth Profile of Nitrogen Atoms in Silicon Oxynitride Films Formed by Low-Electron-Temperature Microwave Plasma Nitridation

Depth Profile of Nitrogen Atoms in Silicon Oxynitride Films Formed by Low-Electron-Temperature Microwave Plasma Nitridation

X-ray metrology for advanced microelectronics

Depth profiling analysis of HfON on SiON ultrathin films by parallel angle resolved x‐ray photoelectron spectroscopy and medium energy ion scattering

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