2013
DOI: 10.1016/j.mee.2013.03.004
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Angle-resolved photoelectron spectroscopy study on interfacial transition layer and oxidation-induced residual stress in Si(1 0 0) substrate near the interface

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“…[19][20][21][22] Even a more extensive transition layer larger than 10Å has been identified using X-rays 8,23 . Within the transition region, photoemission and photoelectron spectroscopies demonstrate the presence of the suboxide layer 20,21,24 , comprised of Si with oxidation states as Si +1 , Si +2 and Si +3 . Further measurements show their ratio to be 1:2:3 or 1:2:1 depending on synthesizing conditions 25,26 .…”
Section: Introductionmentioning
confidence: 99%
“…[19][20][21][22] Even a more extensive transition layer larger than 10Å has been identified using X-rays 8,23 . Within the transition region, photoemission and photoelectron spectroscopies demonstrate the presence of the suboxide layer 20,21,24 , comprised of Si with oxidation states as Si +1 , Si +2 and Si +3 . Further measurements show their ratio to be 1:2:3 or 1:2:1 depending on synthesizing conditions 25,26 .…”
Section: Introductionmentioning
confidence: 99%