Mask fabrication process, transportation, storage, and handling contribute to contamination of 157nm reticles and modified fused silica substrates, resulting in transmission loss. A stable VUV cleaning procedure for contaminated binary, alternating, and attenuated phase shift reticles has been developed. This cleaning procedure was verified by lithographic imaging on the 157nm ASML MS-VII exposure scanner. A point-to-point steady state dose transmission uniformity range across a batch of 25 wafers (the exposure conditions of which were equivalent to that of a 300 mm wafer, 26mm×33mm fields, 50mJ/cm 2 ) that were exposed with a modified fused silica substrate, was found to be <0.24% for a reticle that was cleaned prior to exposure using this VUV cleaning process. In-situ laser cleaning of contaminated mask substrates during exposure in the MS-VII resulted in 1% change in transmission at doses of up to 20 J/cm 2 , above which transmission remains stable (<0.24% variation). The cleaning procedure involves exposing the contaminated reticle in the UVO Reticle Cleaning Station for 30 minutes, using a cleaning gas mixture of N 2 /O 2 =99%/1%. Transmission loss due to contamination within the clean room is limited to 1 -2 % and is reversible upon VUV cleaning. Flare levels of 3% were measured on contaminated reticle relative to a clean state of the same reticle. VUV cleaning is not only good for improving and maintaining stable mask transmission, but it is also good for preventing reticle contamination-induced flare. Contamination rate and contaminant type appear to be dependent on the storage environment of mask substrates and reticles. Typical contaminants included molecular acids (halogens, sulfur, sulfates), molecular bases (ammonia, amines), molecular condensables (hydrocarbons, alcohols, ketones, fatty acids, siloxanes, phthalate), molecular dopant (boron) and molecular metals (Ca, Mg, Al, Cu). Contamination of mask substrates appears to be through a competitive adsorption phenomenon, whereby low molecular weight species with high vapor pressure and low adsorption energies are over time replaced by large molecular weight ones with low vapor pressure and high adsorption energies.
INTRODUCTIONIt is now well established that reticles exposed to ambient air accumulate a film of contaminants that are mostly of hydrocarbon origin. Even a monolayer of organic contaminants or water can lead up to 1-2% transmission loss in modified fused silica substrates (MFS) [1,2]. Upon exposure in lithography, such contamination introduces exposure variation. This paper assesses the impact of fabrication process-, transportation-, handling-, and inspection-induced contamination of 157nm masks. The impact of storage environment and storage duration on contamination of masks is also assessed in this paper. The toolset used in this study comprises SOPRA PUV SE5 tool and a stand-alone UVO reticle cleaning station (RCS), which is equipped with Xe-lamp at 172nm, the details of which are described below.
EXPERIMENTAL2.1 MATERIALS MFS mask subs...