Angled etching of (001) rutile Nb–TiO2substrate using SF6-based capacitively coupled plasma reactive ion etching

Matsutani, Akihiro; Nishioka, Kunio; Sato, Muneharu; Dake, S.; Kobayashi, D.; Isobe, Toshihiro; Nakajima, Akira; Tatsuma, Tetsu; Matsushita, Sachiko

doi:10.7567/jjap.53.06jf02

Cited by 6 publications

(3 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, for the "complete" photon inhibition, we should improve the TiO 2 lithography technique such as to obtain higher aspect ratio, to success angled etching, 41 and so on. Our challenge to the nanofabrication technique on electrochemical functional materials will never end.…”

Section: Discussionmentioning

confidence: 99%

TiO2 Periodic Structures Fabricated via Top-down and Bottom-up Approaches with a Viewpoint of Photonic Crystal

Matsushita

2016

Electrochemistry

Self Cite

View full text Add to dashboard Cite

A photonic crystal, which is a periodic structure on the scale of optical wavelength, can inhibit the propagation of light at particular wavelengths. Various optical devices have been demonstrated using the photonic crystals such as low-threshold lasers, light-emitting diodes, waveguide structures bending at acute angles, and single-mode optical fibers: However, there are few reports on the chemical application of photonic crystals. The author struggle to fabricate electrochemically functional photonic crystals using both bottom-up and top-down techniques, i.e., periodic structures composed of titanium dioxide, and examined the optical and electrochemical characteristics.

show abstract

Section: Discussionmentioning

confidence: 99%

TiO2 Periodic Structures Fabricated via Top-down and Bottom-up Approaches with a Viewpoint of Photonic Crystal

Matsushita

2016

Electrochemistry

Self Cite

View full text Add to dashboard Cite

show abstract

“…One method is to use an angled holder. 10,11) Another method is to use an ion-sheath control plate. 8) The last method is to use a Faraday cage.…”

Section: Introductionmentioning

confidence: 99%

High aspect (>20) etching with reactive gas cluster injection

SEKI¹,

Yamamoto²,

Koike³

et al. 2022

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

• The reactive gas cluster injection process is an etching method that uses a neutral cluster beam without plasma. This process can avoid damage caused by energetic ion irradiation and vacuum UV light from plasma. The characteristics of etching by ClF3–Ar gas cluster injection were investigated at various target distances, pattern widths, and sample temperatures. As a result, the relationship between the etching conditions and the aspect ratio was clarified, and an equation that can predict the maximum limit of aspect ratio was derived from the ClF3 flux and pattern widths. Then high aspect etching with an aspect ratio exceeding 20 is realized. And also, 3D lever structure of 6 layers can be fabricated by double-angled etching with neutral cluster injection at the condition for high aspect etching.

show abstract

“…One method is to use an angled holder. 10,11) To achieve angled etching, the substrate is mounted on one of the angled sidewalls of a groove in the holder. The depth of the groove is limited by the thickness of the ion sheath and the available size of samples is limited by the depth.…”

Section: Introductionmentioning

confidence: 99%

Angled etching of Si by ClF₃–Ar gas cluster injection

Seki

Yamamoto

Kozawa

et al. 2017

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Reactive gas cluster injection is an etching method that uses a neutral cluster beam without ions. This process can avoid damage caused by energetic ion irradiation and vacuum UV light from plasma. ClF 3 -Ar gas cluster injection was performed using a nozzle placed at various angles in the range of 0-78°from the normal to the sample. The Si substrate was anisotropically etched in the direction of the cluster beam, although the incident angle of the cluster beam was oblique. Oblique holes of 100 nm diameter and oblique square pillars of 3 µm width were fabricated with a high aspect ratio by angled cluster injection. It is expected that this process will create unprecedented structures for use in micro-electromechanical systems (MEMSs) or photonic crystals.

show abstract

Angled etching of (001) rutile Nb–TiO₂substrate using SF₆-based capacitively coupled plasma reactive ion etching

Cited by 6 publications

References 30 publications

TiO<sub>2</sub> Periodic Structures Fabricated via Top-down and Bottom-up Approaches with a Viewpoint of Photonic Crystal

TiO<sub>2</sub> Periodic Structures Fabricated via Top-down and Bottom-up Approaches with a Viewpoint of Photonic Crystal

High aspect (>20) etching with reactive gas cluster injection

Angled etching of Si by ClF₃–Ar gas cluster injection

Contact Info

Product

Resources

About

Angled etching of (001) rutile Nb–TiO2substrate using SF6-based capacitively coupled plasma reactive ion etching

Cited by 6 publications

References 30 publications

TiO<sub>2</sub> Periodic Structures Fabricated via Top-down and Bottom-up Approaches with a Viewpoint of Photonic Crystal

TiO<sub>2</sub> Periodic Structures Fabricated via Top-down and Bottom-up Approaches with a Viewpoint of Photonic Crystal

High aspect (>20) etching with reactive gas cluster injection

Angled etching of Si by ClF3–Ar gas cluster injection

Contact Info

Product

Resources

About

Angled etching of (001) rutile Nb–TiO₂substrate using SF₆-based capacitively coupled plasma reactive ion etching

Angled etching of Si by ClF₃–Ar gas cluster injection