1995
DOI: 10.1016/0168-583x(94)00830-2
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Angular and charge state distributions of highly charged ions scattered during low energy surface-channeling interactions with Au(110)

Abstract: We have measured scattered projectile angular and charge state distributions for 3.75 keV/amu Oq+ (3 1 q 1 8) and 1.2 keV/amu AP' (3 5 q 5 14) ions grazingly incident along the [I101 and I1001 directions of a A u (l l 0) single crystal target. Scattered projectile angular distribution characteristic of surface channeling are observed. For both incident species, the dominant scattered charge fraction is neutral, which varies only by a few percent as a function of incident charge state. Significant 0-formation i… Show more

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Cited by 41 publications
(13 citation statements)
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“…by all classically scattered projectiles and consequently, the angular projectile distribution shows the usual banana shape [20].…”
Section: Resultsmentioning
confidence: 99%
“…by all classically scattered projectiles and consequently, the angular projectile distribution shows the usual banana shape [20].…”
Section: Resultsmentioning
confidence: 99%
“…Both SIVR distributions reproduce quite well the corresponding experimental ones [1], also displayed in the figures. They present the usual banana shape, characteristic of the axial surface scattering [30], with final dispersion angles lying on a thick annulus, whose mean radius is approximately equal to θ i . From the comparison of Figs.…”
Section: Resultsmentioning
confidence: 99%
“…We use an Al͑111͒ target, a prototype of the free-electron metal. Compared to a recent experimental study on O Ϫ formation at an Au͑110͒ surface, 19,20 a much larger energy range and a variation over scattering angles are encompassed in our study. Therefore, we are able to observe a ''resonant'' structure for the O Ϫ formation probability as a function of the velocity component parallel to the surface.…”
Section: Introductionmentioning
confidence: 92%
“…[6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] Due to the rather small binding energy, the affinity level of the negative ion is primarily in resonance with unoccupied electronic states of the surface above the Fermi level. Then the RT process is dominated by the neutralization of the negative ion via electron loss from the affinity level to the metal surface.…”
Section: Introductionmentioning
confidence: 99%
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