Angular and NiFe thickness dependence of exchange bias in IrMn/NiFe/IrMn thin film

Effect of Seed Layer on Room Temperature Tunnel Magnetoresistance of MgO Barriers Formed by Radical Oxidation in IrMn-Based Magnetic Tunnel Junctions

“…The H ex exhibits a linear decrease with the NiFe thickness increase for t NiFe > 16 # A which can be expressed by H ex $ 1=t NiFe . 30) This is in good agreement with the reported findings from Yoo et al 31) However, for films with NiFe layer below 16 # A the previous relation is not valid because of the considerable changes in the interface structure. It is noteworthy that as t NiFe 10 # A there is almost no exchange-bias interaction and H ex vanishes.…”

Origin and properties of an unexpected exchange bias of Ta/Ni80Fe20/Ir20Mn80/Ta heterostructure in ultrathin limit: Impact of the oblique deposition and Ta/Ni80Fe20 alloying

“…The choices of moderate t Ir20Mn80 = 8 nm and thinner t Ni80Fe20 = 3 nm guarantee continuous layers and that t Ni80Fe20 is below the ultrathin limit [34][35][36]. An interesting aspect of the use of ultrathin FM layers in exchange biased multilayer structures is the fact that they favor higher H EB due to the inverse proportionality with the ferromagnetic layer thickness (FM), i.e., H EB ∝ 1/t FM [13,43,46] . In addition, ultrathin Ni 80 Fe 20 films have often been indicated to be used in spintronic devices that operate with spin pumping into nonmagnetic normal metals [47,48], but they are also being used to pump spins into antiferromagnetic Ir 20 Mn 80 sinks [49,50] allowed the detection of an alloy at the Ta/Ni 80 Fe 20 interface, the presence of which has an important role to set and is essential to elucidate the total magnetic response of the heterostucture.…”