1994
DOI: 10.1117/12.182679
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Angular dependence of tunneling effects in Ba 1-x K x BiO 3 grain boundaries

Abstract: We report on the tunneling properties of Ba1KBiO3 (BKBO) grain boundaries prepared on bicrystal substrates. We studied symmetric tilt boundaries with 5°, 24° , 36.8°and 45°m isorientation on SrTiO3, and 24° on MgO substrates. The three high angle misorientations used yield clear superconductor-insulator-superconductor behavior, with very little conductance below the bias corresponding to twice the BKBO energy gap, and a strong peak at that value. The two samples prepared on MgO yielded somewhat broader tunneli… Show more

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“…As is well known [603], this peak is caused by tunneling of thermally excited quasiparticles between empty states with an enhanced DOS located above and below equal superconducting gaps in symmetric S-I-S junctions. Such a feature was found, for example, in G s (V ) measured for grainboundary symmetric tunnel junctions in epitaxial films of the s-wave oxide CDWS Ba 1−x K x BiO 3 [616]. One should be careful not to confuse this peak with the dc Josephson peak restricted to V = 0, which is often seen for symmetric high-T c junctions [399].…”
Section: Dip-hump Structures and Pseudogaps In Tunnel Current-voltagementioning
confidence: 84%
“…As is well known [603], this peak is caused by tunneling of thermally excited quasiparticles between empty states with an enhanced DOS located above and below equal superconducting gaps in symmetric S-I-S junctions. Such a feature was found, for example, in G s (V ) measured for grainboundary symmetric tunnel junctions in epitaxial films of the s-wave oxide CDWS Ba 1−x K x BiO 3 [616]. One should be careful not to confuse this peak with the dc Josephson peak restricted to V = 0, which is often seen for symmetric high-T c junctions [399].…”
Section: Dip-hump Structures and Pseudogaps In Tunnel Current-voltagementioning
confidence: 84%