Angular distribution of sputtered atoms in physical vapor deposition and collimated sputtering

Cook, John K.

doi:10.1016/s0040-6090(98)01001-3

Cited by 5 publications

(1 citation statement)

References 4 publications

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“…Then, the deposition process was carried out by dc-magnetron sputtering: in our apparatus it is possible to move the substrate holder so that it is in front of the target source of the material to be grown, so as to have a flux of atoms that is perpendicular to the substrate. Moreover, the apparatus allows the rotation of the substrate guarantying a uniform thickness of the sample and it is equipped with a collimator with a 2:1 (height:width) aspect ratio to reduce the angular spread of the incident sputtered atoms 29 (in this way, it is about 10 degrees). We have verified that the use of 6 such a collimator greatly favors the lift-off process and offsets the shadow effect, which may alter the dot thickness at the border.…”

Section: Methodsmentioning

confidence: 99%

Magnetic exchange coupling inIrMn/NiFenanostructures: From the continuous film to dot arrays

et al. 2015

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A comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagnetic IrMn[10 nm] / NiFe[5 nm] continuous film and in arrays of square dots with different size (1000 nm, 500 nm and 300 nm) is presented, which elucidates the temperature dependence of the exchange field Hex and coercivity HC, in conjunction with spatial confinement effects. To achieve this goal, samples prepared by electron beam lithography and liftoff using dc-sputtering were subjected to structural investigations by electron microscopy techniques and to magnetic study, through SQUID and magneto-optic magnetometry measurements coupled to micromagnetic calculations. In particular, we have observed that at T = 300 K Hex decreases with reducing the size of the dots and it is absent in the smallest ones, whereas the opposite trend is visible at T = 10 K (Hex ~ 1140 Oe in the dots of 300 nm). The exchange bias mechanism and its thermal evolution have been explained through an exhaustive phenomenological model, which joins spatial confinement effects with other crucial items concerning the pinning antiferromagnetic phase: the magnetothermal stability of the nanograins forming the IrMn layer (mean size ~ 10 nm), assumed as essentially non-interacting from the magnetic point of view; the proven existence of a structurally disordered IrMn region at the interface between the NiFe phase and the bulk of the IrMn layer, with a magnetic glassy nature; the stabilization of a low-temperature (T < 100 K) frozen collective regime of the IrMn interfacial spins, implying the appearance of a length of magnetic correlation among them.

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Section: Methodsmentioning

confidence: 99%

Magnetic exchange coupling inIrMn/NiFenanostructures: From the continuous film to dot arrays

et al. 2015

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Uniformity and stoichiometry of large-area multicomponent oxide thin films deposited by sputtering

et al. 2005

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Quantification of self-sputtering and implantation during pulsed laser deposition of gold

Perea

Gonzalo

Budtz-Jørgensen

et al. 2008

Journal of Applied Physics

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This work reports on the quantification of self-sputtering and implantation occurring during pulsed laser deposition of Au as a function of the laser fluence used to ablate the gold target. The experimental approach includes, on one hand, in situ electrical ͑Langmuir͒ and optical ͑two-dimensional imaging͒ probes for determining, respectively, ion and excited neutral kinetic energy distributions. On the other hand, it includes determination of the density of ͑i͒ ions reaching a substrate, and ͑ii͒ gold atoms deposited on a substrate as well as of a proportion of atoms that are self-sputtered. The experimental results supported by numerical analysis show that self-sputtering and implantation are both dominated by ions having kinetic energies Ն200 eV. They are a fraction 0.60-0.75 of the species arriving to the substrate for ablation laser fluences 2.7-9.0 J cm −2 . Self-sputtering yields in the range 0.60-0.86 are determined for the same fluence range.

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Angular distribution of sputtered atoms in physical vapor deposition and collimated sputtering

Cited by 5 publications

References 4 publications

Magnetic exchange coupling inIrMn/NiFenanostructures: From the continuous film to dot arrays

Magnetic exchange coupling inIrMn/NiFenanostructures: From the continuous film to dot arrays

Uniformity and stoichiometry of large-area multicomponent oxide thin films deposited by sputtering

Quantification of self-sputtering and implantation during pulsed laser deposition of gold

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