2012
DOI: 10.1039/c2cc31546g
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Angular-shaped naphthodifurans, naphtho[1,2-b;5,6-b′]- and naphtho[2,1-b;6,5-b′]-difuran: are they isoelectronic with chrysene?

Abstract: Although angular-shaped naphthodifurans, naphtho[1,2-b;5,6-b']- and naphtho[2,1-b;6,5-b']-difuran, are formally isoelectronic with chrysene as their thiophene counterparts, naphtho[1,2-b;5,6-b']- and naphtho[2,1-b;6,5-b']-dithiophene, the HOMO energy level of naphthodifurans is much higher than those of naphthodithiophenes and chrysene. The difference in electronic structure in the ground state can be explained by distinct electronic perturbation from the outermost aromatic rings.

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Cited by 25 publications
(20 citation statements)
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“…[ 281,282 ] NDFs have four isomeric structures with linear‐shaped NDF1 and NDF2, angular‐shaped naphtho‐[1,2‐b;5,6‐b′]difuran (NDF3) and naphtho[2,1‐b;6,5‐b′]difuran (NDF4) ( Figure ). [ 283,284 ] Despite the structural similarity, their electronic structures are significantly different and depend largely on the molecular shapes.…”
Section: Naphthodifurans‐based Materials Used In Oscsmentioning
confidence: 99%
See 1 more Smart Citation
“…[ 281,282 ] NDFs have four isomeric structures with linear‐shaped NDF1 and NDF2, angular‐shaped naphtho‐[1,2‐b;5,6‐b′]difuran (NDF3) and naphtho[2,1‐b;6,5‐b′]difuran (NDF4) ( Figure ). [ 283,284 ] Despite the structural similarity, their electronic structures are significantly different and depend largely on the molecular shapes.…”
Section: Naphthodifurans‐based Materials Used In Oscsmentioning
confidence: 99%
“…Subsequently, the following methods are similar with NDF1, until the cyclization step modify to use tetrabutylammonium fluoride. [ 284 ]…”
Section: Naphthodifurans‐based Materials Used In Oscsmentioning
confidence: 99%
“…最近, Qian 等 [5] 以苯并二呋喃(BDF)为核, 引入苯上 带有氟和烷氧链的基团得到了 BDF 的衍生物, 并与吡 咯并吡咯二酮(DPP)反应得到了如图 3 的小分子化合物 M2, M2 的 HOMO 能级为-5.79 eV, 最低未占分子轨道 (LUMO)能级为-3.77 eV, E g 为 2.02 eV, 其噻吩类似物 的 HOMO 能级为-5.80 eV, LUMO 能级为-3.83 eV, 带 隙为 1.97 eV, 采用空间电荷限制电流(SCLC)法测得 M2 薄膜的空穴迁移率达到 3.7×10 -4 cm 2 •V -1 •s -1 , 电子迁 移率达到 5.0×10 -4 cm 2 •V -1 •s -1 , 应用在 OSC 中 PCE 达 到 5.5%, 对应的短路电流 J sc =11.4 mA•cm -2 , V oc =0.80 V, 填充因子 FF=0.60, M2 的效率是其噻吩类似物的两 倍, 这主要是因为其 J sc 是噻吩类似物(J sc =5.5 mA• cm -2 )的两倍导致的, M2 形貌较好, 有利于激子和电荷 的分离, 同时 M2 的溶解性也要优于噻吩类似物. 随后, Nakano 等 [7] 发现, 角状的萘并二呋喃(NDF) 系列的电子结构和它们对应的萘并二噻吩(NDT)系列明 显不同(如图 5), 这主要是由于不同最外层芳香环的电 子对角状 NDF 和对应的 NDT 差异明显, 这种差异的本 质可以归因于呋喃和噻吩的芳香性及电负性不同, 且强 烈地影响到了整体稠环的电子结构. NDF1 (M5) 的 HOMO 能级为-5.5 eV, LUMO 能级为-2.1 eV, 其类似 的噻吩结构的 HOMO 能级为-5.3 eV, LUMO 能级为 -2.3 eV; 角状结构 NDF3 (M6)与 M5 相比, HOMO 能级 更低一点为-5.6 eV, LUMO 能级相同, 而类似的角状噻 吩结构的能级都比 M6 低, 且 HOMO 能级降到了-5.8 eV, NDF3 (M7)能级与 M6 的相似, 但 M7 的噻吩相似化 合物与 M6 的噻吩相似化合物的能级都要高一些.…”
Section: 呋喃稠环小分子化合物unclassified
“…[39][40][41][42] Considerable attention is currently being given to furan as a basic building block for organic p-conjugated materials that are more stable and that have given an indication of their potential applications, especially in OFETs and OLEDs. 19,[43][44][45][46][47][48] Binaphtha-furanyl has been reported as an OLET. 19 Recently, diphenyl-naphtho[2,1-b:6,5-b 0 ]difuran (DPNDF) has been experimentally synthesized and reported as a good hole transport OSM for OFETs.…”
Section: Introductionmentioning
confidence: 99%