The spectral properties and temperature dependence of resonant-cavity light-emitting diodes emitting at around 650 nm are investigated. The importance of quantum well (QW) and cavity mode (CM) features in the emission spectra are studied as a function of current density and emission angle, using reflectance measurements made directly on the devices themselves, and photo-modulated reflectance spectroscopy on the as-grown wafers. The temperature dependence of the device output was also studied by comparing light output and emission spectra at temperatures between 15 and 75 C, for different devices with varying CM-QW offsets. We show that when this offset is increased, devices have decreased temperature sensitivity.