Anharmonicity and lattice coupling of bond-centered hydrogen and interstitial oxygen defects in monoisotopic silicon crystals

Pereira, Rui N.; Nielsen, Bjarne; Coutinho, J.; Torres, V.J.B.; Jones, R.; Ohya, T.; Itoh, Kohei M.; Briddon, P.R.

doi:10.1103/physrevb.72.115212

Cited by 5 publications

(1 citation statement)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The calculated value of r 0 is r 0 = 0.029 nm, which is in the range of values in, for example, [2,13,16,35]. Further, the parameters, which were obtained by fitting the lower energy ν 2 and ν 3 transitions, predict that the g 2 coupling will induce a transition at 1206.7 cm −1 with an intensity 2.9% that of the 1136 cm −1 line, while experiment gives values of 1205.7 cm −1 and 3.8% [19].…”

Section: Si:o Imentioning

confidence: 73%

The spectral bandshape of the ν₃(1136 cm^{− 1}) vibration of oxygen in silicon and dilute silicon–germanium alloys

Davies¹

2010

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

At room temperature, the ν(3) (1136 cm(-1)) absorption band of oxygen in silicon and Si(1 - x)Ge(x) alloys consists of dozens of components, masking the properties of the individual transitions. Here, experimental data are presented for the evolution of the ν(3) band in the temperature range 0 < T < 300 K and the composition range 0 ≤ x ≤ 0.066. The vibrational potential for Si:O is developed to provide accurate fits to the absorption data. The potential predicts properties consistent with published studies, including hydrostatic stress experiments. Extending the model to Si(1 - x)Ge(x) allows the properties of the alloy-induced O(i)-I, O(i)-II and O(i)-III components to be investigated accurately to higher values of x than hitherto. The properties of O(i)-I are understood as perturbations by Ge atoms of Si:O, and O(i)-III is rationalized in terms of off-axis movement of the O atom resulting from the nearby Ge atom. Challenges to theory are: the behaviour of O(i)-II, understanding the strain fields generated by Ge atoms in Si, and the reduced coupling of the ν(2) and ν(3) modes with increasing amplitude in the ν(2) mode.

show abstract

Section: Si:o Imentioning

confidence: 73%

The spectral bandshape of the ν₃(1136 cm^{− 1}) vibration of oxygen in silicon and dilute silicon–germanium alloys

Davies¹

2010

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

show abstract

Theory of anharmonicity on bond-centered hydrogen oscillators in silicon

Coutinho

Torres

Pereira

et al. 2006

Physica B: Condensed Matter

View full text Add to dashboard Cite

Effect of energetic ions on the stability of bond-center hydrogen in silicon

et al. 2007

View full text Add to dashboard Cite

Anharmonicity and lattice coupling of bond-centered hydrogen and interstitial oxygen defects in monoisotopic silicon crystals

Cited by 5 publications

References 35 publications

The spectral bandshape of the ν₃(1136 cm^{− 1}) vibration of oxygen in silicon and dilute silicon–germanium alloys

The spectral bandshape of the ν₃(1136 cm^{− 1}) vibration of oxygen in silicon and dilute silicon–germanium alloys

Theory of anharmonicity on bond-centered hydrogen oscillators in silicon

Effect of energetic ions on the stability of bond-center hydrogen in silicon

Contact Info

Product

Resources

About

Anharmonicity and lattice coupling of bond-centered hydrogen and interstitial oxygen defects in monoisotopic silicon crystals

Cited by 5 publications

References 35 publications

The spectral bandshape of the ν3(1136 cm− 1) vibration of oxygen in silicon and dilute silicon–germanium alloys

The spectral bandshape of the ν3(1136 cm− 1) vibration of oxygen in silicon and dilute silicon–germanium alloys

Theory of anharmonicity on bond-centered hydrogen oscillators in silicon

Effect of energetic ions on the stability of bond-center hydrogen in silicon

Contact Info

Product

Resources

About

The spectral bandshape of the ν₃(1136 cm^{− 1}) vibration of oxygen in silicon and dilute silicon–germanium alloys

The spectral bandshape of the ν₃(1136 cm^{− 1}) vibration of oxygen in silicon and dilute silicon–germanium alloys