Anharmonicity-induced polaron relaxation in GaAs/InAs quantum dots

Carrier relaxation mechanisms in self-assembled(In,Ga)As∕GaAsquantum dots: EfficientNarvaez1, Bester2, Zunger3 2006Phys. Rev. B

“…On the other hand, when a sole electron is present and no hole, the inter-shell relaxation time slows down by a factor of about 2-10. For instance, in n-doped (In,Ga)As/GaAs quantum dots the low-temperature P → S relaxation time has been extracted from pump-probe infra-red spectroscopy and is in the range of 20-65 ps in the experiments of Zibik et al Several relaxation mechanisms have been proposed as responsible for the fast inter-shell relaxation: multi-phonon emission, 32 Auger (carrier-carrier) scattering, 33,34,35,36 and polaron relaxation 37,38,39,40 .…”

Exciton-LO phonon dynamics inInAs∕GaAsquantum dots: Effects of zone-edge phonon damping

“…Since the anharmonic effects seem to be essential e.g. for correct modeling of relaxation phenomena 15,25,26,27 , this ambiguity is a real problem.…”

Phonon-Induced Dephasing of Optically Driven Exciton States in Quantum Dots: Spectral Interpretation

“…(4). The first term in this expression reflects the mixing of exciton states to polaronic effects [11], while the second one describes the dynamical effect of interest. The spectral density of LO phonons is peaked at ω = Ω , so that the effect is governed by the value of the nonlinear spectral function S b (ω) + S c (ω) at ω = E/h + Ω , which reflects the fact that the optically inactive state may only be occupied via a phonon-assisted process.…”