Anion vacancies in CuInSe2

Niki, Shigeru; Suzuki, Ryoichi; Ishibashi, Shoji; Ohdaira, Toshiyuki; Fons, Paul; Yamada, A.; Ōyanagi, H.; Wada, Takahiro; Kimura, Ryuhei; Nakada, Tokio

doi:10.1016/s0040-6090(00)01718-1

Cited by 33 publications

(14 citation statements)

References 8 publications

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“…On the other hand, National Renewable Energy Laboratory (NREL) group has theoretically predicted that the light‐induced metastability in the net acceptor concentration of the CIGS absorber layer is caused by Cu‐Se divacancy complex ( V Se ‐ V Cu ), where this defect is able to convert from a shallow donor into a shallow acceptor configuration, and vice versa . However, it has also been reported that the incorporation of Na and air‐annealing of CIGS layer suppress the Se‐vacancy related defects such as V Se and ( V Cu ‐ V Se ) vacancy complex . Therefore, the main cause of the change in the N CV due to HLS treatment of NaF‐treated CIGS solar cell could be explained by the specific behavior of Na‐related defects with low substitution and migration energies, not the ( V Cu ‐ V Se ) vacancy complex.…”

Section: Basic Cell Parameters Of the Naf‐free And Naf‐treated Cigs Smentioning

confidence: 99%

Tunable Carrier Concentration of NaF‐Treated CIGS Solar Cells Using Heat–Light Soaking and Subsequent Heating

Matsuura

Shudo

Khatri

et al. 2018

Physica Rapid Research Ltrs

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The combined effect of the heat–light soaking (HLS) and subsequent heat‐soaking (HS) processes is investigated on NaF‐free and NaF‐treated CIGS solar cells with CdS buffer layer. The HLS treatment improves cell efficiency slightly with increased open‐circuit voltage for NaF‐treated CIGS solar cells, whereas the cell efficiency deteriorates for NaF‐free CIGS solar cells. The different behaviors between both types of solar cells may be due to a Na‐containing new layer, which is formed at the CIGS surface region by NaF‐treatment. On the other hand, the short‐circuit current density (JSC) decreases for both types of solar cells after HLS treatment, which is attributed to the extremely high carrier concentration (NCV), leading to a narrower space charge region. However, it is found that the large NCV can be tuned to an appropriate value using the subsequent HS technique. As a result, the JSC loss is successfully reduced, therefore improving cell efficiency. The details of this improved efficiency are discussed with respect to the change of NCV in CIGS solar cells by the HLS and HS processes.

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Section: Basic Cell Parameters Of the Naf‐free And Naf‐treated Cigs Smentioning

confidence: 99%

Tunable Carrier Concentration of NaF‐Treated CIGS Solar Cells Using Heat–Light Soaking and Subsequent Heating

Matsuura

Shudo

Khatri

et al. 2018

Physica Rapid Research Ltrs

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“…Na treatment and growth of CIGS thin films under “Se‐rich” and “Cu‐rich” conditions have been suggested as methods to suppress the formation of the divacancy complex in the absorber . However, in our previous investigation, we observed performance improvements by HLS or HBS treatments in NaF‐treated CIGS solar cells having a CGI ratio of 0.95 .…”

mentioning

confidence: 62%

Metastable Behavior on Cesium Fluoride‐Treated Cu(In_1–x,Ga_x)Se₂ Solar Cells

Khatri

Yashiro

Lin

et al. 2020

Physica Rapid Research Ltrs

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Metastable behavior of cesium fluoride (CsF)‐treated Cu(In1–x,Gax)Se2 (CIGS) solar cells is investigated under heat‐light soaking (HLS) and heat‐soaking (HS) treatments. HLS increases open‐circuit voltage, fill factor, efficiency, and net carrier concentration and decreases short‐circuit current density, whereas heat‐soaking treatment acts oppositely. The performance of a CsF postdeposition treatment to CIGS thin film in selenium vapor, and closer to stoichiometry copper content, did not mitigate the open‐circuit voltage improvement after HLS. These results argue the traditional concept of the VSe–VCu divacancy complex for the total beneficial effect of HLS in alkali‐treated CIGS solar cells. The metastable behavior observed in the CsF‐treated devices due to the HLS and HS treatments is explained by the specific behavior of alkali‐containing new compounds at the surface and/or the migration of alkali metals at the surface and bulk regions.

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“…In the case of CuFeInTe 3, the substitution of Cu 1+ by the higher valence cation Fe 2+ , leaving a weakly bound electron, can result in an n-type doping. Additionally, the possible presence of Te 2-vacancies (as previously discussed in the XRD section) could also acts as electron donor centers, as for other chalcogenides [28][29][30][31]. The electron mobility of the CuFeInTe 3 sample (6 cm 2 /Vs at 300 K) is much smaller than that observed for the holes in CuInTe 2 (105 cm 2 /V s) [12].…”

Section: Hall Effect Measurementsmentioning

confidence: 86%

“…For CuInTe 2 , the usually p-type conductivity has been attributed to In Cu antisite defects and anion vacancies, V Te [27]. It is important to mention that the usually believed acceptor character of V Te in CuInTe 2 [27] strongly contrasts with the well-known capability of this type of vacancy for introducing shallow levels to the conduction band in others chalcogenides [28][29][30][31]. In the case of CuFeInTe 3, the substitution of Cu 1+ by the higher valence cation Fe 2+ , leaving a weakly bound electron, can result in an n-type doping.…”

Section: Hall Effect Measurementsmentioning

confidence: 99%

Thermoelectric transport properties of CuFeInTe3

Cabrera

Zumeta-Dubé

Korte

et al. 2015

Journal of Alloys and Compounds

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In this paper we report on the preparation of CuFeInTe 3 and its thermoelectric properties. Optical diffuse reflectance and Raman scattering spectroscopies, as well as X-ray powder diffraction were also carried out. Unprecedented for CuFeInTe 3 , a direct and an indirect bang gap were found from its absorption spectrum. From Hall effect measurements at 300 K the carrier concentration (n), electrical conductivity (σ) and mobility (µ) were determined. In order to investigate whether this material is suitable for thermoelectric applications, the Seebeck coefficient (S), the thermal conductivity (κ) and σ as a function of temperature were measured. The measurements of Hall and Seebeck coefficients showed that alloying CuInTe 2 with Fe 2+ produces a change from the original p-type to n-type conductivity and causes a decrease in κ value, while leaving σ unchanged. Relatively large S values were found for CuFeInTe 3 , with respect to CuInTe 2 , which were explained on the basis of a probable electron effective mass increase due to Fe 2+ incorporation. It was also found, that thermal and electrical conductivities decrease with increasing temperature in the range between 300 and 450 K, while the figure of merit (zT) reaches values of 0.075 and 0.126 at 300 and 450 K respectively. Thus, zT of CuFeInTe 3 increases with temperature, reaching values larger than those reported for CuInTe 2 .

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Anion vacancies in CuInSe2

Cited by 33 publications

References 8 publications

Tunable Carrier Concentration of NaF‐Treated CIGS Solar Cells Using Heat–Light Soaking and Subsequent Heating

Tunable Carrier Concentration of NaF‐Treated CIGS Solar Cells Using Heat–Light Soaking and Subsequent Heating

Metastable Behavior on Cesium Fluoride‐Treated Cu(In_1–x,Ga_x)Se₂ Solar Cells

Thermoelectric transport properties of CuFeInTe3

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Anion vacancies in CuInSe2

Cited by 33 publications

References 8 publications

Tunable Carrier Concentration of NaF‐Treated CIGS Solar Cells Using Heat–Light Soaking and Subsequent Heating

Tunable Carrier Concentration of NaF‐Treated CIGS Solar Cells Using Heat–Light Soaking and Subsequent Heating

Metastable Behavior on Cesium Fluoride‐Treated Cu(In1–x,Gax)Se2 Solar Cells

Thermoelectric transport properties of CuFeInTe3

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Product

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Metastable Behavior on Cesium Fluoride‐Treated Cu(In_1–x,Ga_x)Se₂ Solar Cells