Anisotropic cation diffusion in the GaAs capping of InAs/GaAs(001) quantum dots

Abstract

The effect of the As flux on the kinetics of Ga and In cations, and the role of the elastic strain were studied in the capping process of isolated InAs quantum dots with GaAs by molecular beam epitaxy. Using a fixed evaporation geometry and a suitable choice of growth parameters which enhance the anisotropic diffusion of In and Ga cations, we obtained, at variance with current results, the formation of asymmetric GaAs caps. The growth of a second InAs layer led to the formation of vertically aligned couples of dots (one buried, the other uncapped) placed on the right side of the GaAs caps on the surface, with no other dots in different locations

Incorporating structural analysis in a quantum dot Monte-Carlo model

“…Previously to measure the micro-structure uncapped QDs were measured using ARM, 18 however reports in literature suggested that QD shape maybe affected when capped. 19,20 A cross-section of the active region can be examined using TEM, which will enables buried structural information to be seen.…”