Anisotropic characteristics of a-plane GaN films grown on γ-LiAlO2 (302) substrates by MOCVD

Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

“…On this occasion, the conventional metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) wherein high growth temperature is adopted (usually higher than 700 1C) is not the optimal approach for epitaxial growth of GaN on these unconventional substrates. The as-grown films grown by those technologies usually show poor quality [19][20][21][22][23]. Apparently, a much lower growth temperature is necessary.…”