Anisotropic crystalline morphology of epitaxial thick AlN films grown on triangular‐striped AlN/sapphire template

Arauchi, Takuji; Takeuchi, Shinichi; Nakamura, Kiyoji; Khan, D.T.; Nakamura, Yoshiaki; Miyake, Hideto; Hiramatsu, Kazumasa; Sakai, Akira

doi:10.1002/pssa.201300461

Cited by 4 publications

(4 citation statements)

References 11 publications

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“…This may be due to the following reasons. The linear absorption coefficient of X-rays is 119 cm –1 in AlN, and the penetration depth of X-rays to (0002) in AlN is as large as 13.2 μm . On the other hand, the thickness of the AlN layer grown at 1550 °C is less than 2 μm (as shown in Figure ).…”

Section: Resultsmentioning

confidence: 96%

“…The linear absorption coefficient of X-rays is 119 cm −1 in AlN, 38 and the penetration depth of X-rays to (0002) in AlN is as large as 13.2 μm. 39 On the other hand, the thickness of the AlN layer grown at 1550 °C is less than 2 μm (as shown in Figure 11). Therefore, this fwhm value is considered to be influenced by the seed crystal.…”

Section: Effect Of Cooling Rate On Alnmentioning

confidence: 99%

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Development of a New Solution Growth Method for AlN Single Crystals Using Type 430 Ferritic Stainless Steel Flux

Li,

Adachi,

Ohtsuka

et al. 2024

Crystal Growth & Design

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The solution growth method is an economical and environmentally friendly approach to producing aluminum nitride (AlN) single crystals. However, the fluxes used in the solution growth method have low nitrogen solubility, which limits the growth rate of AlN. In this study, as part of the development of a solution growth method for AlN using Fe−Cr fluxes with high nitrogen solubility, experiments were conducted using type 430 ferritic stainless steel, which is composed mainly of Fe−Cr, as the flux. Through a series of experiments, we report the results of the optimization of various experimental growth parameters (AlN polarity, cooling rate, and growth temperature). Furthermore, a growth mechanism based on the Al:N ratio in the flux is proposed, introducing the concept of effective nitrogen content to explain how the growth temperature affects the AlN growth rate using Fe− Cr flux.

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Section: Resultsmentioning

confidence: 96%

Section: Effect Of Cooling Rate On Alnmentioning

confidence: 99%

Development of a New Solution Growth Method for AlN Single Crystals Using Type 430 Ferritic Stainless Steel Flux

Li,

Adachi,

Ohtsuka

et al. 2024

Crystal Growth & Design

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show abstract

“…In order to quantitatively estimate the value of the curvature of the GaN (20–21) lattice plane along the X [−1014] and Y [−12–10] directions, we have calculated Δ ω which is the difference between the peak position angle at each sampling position and that at X or Y = 0 and reflects the degree of the inclination of measured crystal lattice plane . Figure shows the dependence of Δ ω as a function of the sampling position derived from the results shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…The crystalline morphology often induces crack generation and non‐uniform distribution of residual strain in the (20–21) GaN film. For example, in the case of polar nitride semiconductor film grown on periodic trench patterned templates, it is known that the crystalline morphology in the film strongly depends on the periodic trench patterned structures . It probably affects not only the crystalline properties, but also the optical properties.…”

Section: Introductionmentioning

confidence: 99%

Thickness and growth condition dependence of crystallinity in semipolar (20–21) GaN films grown on (22–43) patterned sapphire substrates

Takeuchi

Uchiyama

Arauchi

et al. 2015

Physica Status Solidi (b)

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We have investigated the crystalline morphology such as lattice plane curvature and lattice plane tilting in (20-21) GaN films on (22-43) patterned sapphire substrates (PSS) by using X-ray rocking curve (XRC) measurements. The results of the symmetric XRC for the GaN (20-21) plane showed anisotropic lattice plane curvature between the [À1014] and [À12-10] directions. This is due to the large difference of the thermal expansion coefficient in the [0001] direction between GaN and sapphire. From the results of asymmetric XRC for the and (12-31) diffractions, it is found that lattice plane tilting is highly dependent on the film thickness and the growth condition. The Àc-plane-suppressed growth process with tuning the V/III ratio for the (20-21) GaN films on the (22-43) PSS is very effective to suppress the generation of basal plane stacking faults as confirmed by TEM analysis.

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High-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations

Jana

Mukhopadhyay

Ghosh

et al. 2014

Journal of Applied Physics

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The work presents a comparative study on the effects of In incorporation in the channel layer of AlGaN/GaN type-II heterostructures grown on c-plane sapphire by Plasma Assisted Molecular Beam Epitaxy. The structural characterizations of these samples were performed by High-Resolution X-Ray Diffraction (HRXRD), X-ray Reflectivity (XRR), Field Emission Scanning Electron Microscopy, and High Resolution Transmission Electron Microscopy. The two-dimensional electron gas in the AlGaN/GaN and AlGaN/InGaN interface was analyzed by electrochemical capacitance voltage and compared with theoretical results based on self-consistent solution of Schördinger–Poisson equations. The carrier profile shows enhanced confinement in InGaN channel (1.4393 × 1013 cm−2 compared to 1.096 × 1013 cm−2 in GaN). On the basis of HRXRD measurements, the stress-strain of the layers was examined. The c- and a-lattice parameters of the epilayers as well as in-plane and out-of plane strains were determined from the ω-2θ for symmetric scan and ω-Xθ (X represents the coupling coefficient) for asymmetric scan. Strain, tilt, and correlation lengths were calculated from Williamson–Hall plots, whereas stress was examined from modified plot of the same data assuming Uniform Stress Deformation Model. Moreover, the twist angle was measured from skew symmetric scan of (102), (103), and (105) plane along with (002) symmetric plane. The composition and strain/relaxation state of the epilayers were observed in detail by reciprocal space mapping (RSM). The symmetric (002) triple axis RSM and asymmetric (105 and 114) double axis RSM of grazing incidence and exit geometry were carried out on each sample. The defect density was measured from HRXRD curves of skew symmetric (002) and (102) reflection plane. The Al and In mole fraction and strain states of the layers were calculated by fitting the experimental curves with computer simulations and compared with theoretical findings based on elastic theory. The thicknesses of the layers and roughness of the interfaces were measured from simulation of the nominal structure by fitting with XRR experimental curves. The HRXRD measured thicknesses of the layers were further confirmed by cross sectional electron micrographs.

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Anisotropic crystalline morphology of epitaxial thick AlN films grown on triangular‐striped AlN/sapphire template

Cited by 4 publications

References 11 publications

Development of a New Solution Growth Method for AlN Single Crystals Using Type 430 Ferritic Stainless Steel Flux

Development of a New Solution Growth Method for AlN Single Crystals Using Type 430 Ferritic Stainless Steel Flux

Thickness and growth condition dependence of crystallinity in semipolar (20–21) GaN films grown on (22–43) patterned sapphire substrates

High-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations

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