Anisotropic distribution of residual strain around conical nanoindentation in silicon

Stress measurement at the interface between a Si substrate and diamond-like carbon/Cr/W films by the electronic backscatter diffraction method

“…13,14) In our previous studies, the strain distribution around nanoindentations on single-crystal silicon was two-dimensionally mapped by using EBSD and CrossCourt software with high strain resolution. 15,16) In this work, we focus on the measurement of stress at the interface of Si=DLC, Si=Cr, and Si=W systems by employing EBSD and CrossCourt analysis, which has not been widely studied. Furthermore, the distinct characteristics of stress distribution in these systems are discussed based on the mechanism of stress evolution combined with high-resolution electron microscopy (HREM) and electron spectroscopic imaging (ESI) observations.…”