Anisotropic electronic conduction in metal nanofilms grown on a one-dimensional surface superstructure

Nagamura, Naoka; Hobara, Rei; Uetake, T.; Hirahara, Toru; Ogawa, M.; Okuda, Takashi; He, Ke; Moras, Paolo; Sheverdyaeva, P. M.; Carbone, C.; Kobayashi, Katsuyoshi; Matsuda, Iwao; Hasegawa, Shuji

doi:10.1103/physrevb.89.125415

Cited by 7 publications

(5 citation statements)

References 33 publications

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“…In the larger terraces of figure 5(a), high density of dislocations lines can be found. This is in line with studies of Ag films grown on reconstructed Si(111) surfaces, where the lattice mismatch induces a massive formation of ordered stacking fault planes that results in strong lateral confinement [22][23][24][25]. However, the density of dislocation lines is dramatically reduced at densely stepped areas of the surface.…”

Section: Resultssupporting

confidence: 89%

Metallic thin films on stepped surfaces: lateral scattering of quantum well states

et al. 2014

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Quantum well states of Ag films grown on stepped Au(111) surfaces are shown to undergo lateral scattering, in analogy with surface states of vicinal Ag(111). Applying angle resolved photoemission spectroscopy we observe quantum well bands with zone-folding and gap openings driven by surface/interface step lattice scattering. Experiments performed on a curved Au(111) substrate allow us to determine a subtle terrace-size effect, i.e., a fine step-density-dependent upward shift of quantum well bands. This energy shift is explained as mainly due to the periodically stepped crystal potential offset at the interface side of the film. Finally, the surface state of the stepped Ag film is analyzed with both photoemission and scanning tunneling microscopy. We observe that the stepped film interface also affects the surface state energy, which exhibits a larger terrace-size effect compared to surface states of bulk vicinal Ag(111) crystals.Keywords: metallic quantum well, vicinal surface, photoemission, thin metal film, scanning tunneling microscopy 2 New J. Phys. 16 (2014) 123025 F Schiller et al

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Section: Resultssupporting

confidence: 89%

Metallic thin films on stepped surfaces: lateral scattering of quantum well states

et al. 2014

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“…Figure 2 e shows a polar plot of the resistivity as a function of the measured in-plane angle. Previous works reported cases where the anisotropic conductivity was a consequence of an anisotropic morphology, e.g., nano-columns [ 18 ] and nano-wires [ 26 , 27 ], being cases different to our case. Our nano-sheets-formed Co films, in the as-deposited state, have shown a large resistivity (roughly 130 mOhm.cm), when the electric current has flowed along the perpendicular direction of the surface nano-strings (cf.…”

Section: Resultscontrasting

confidence: 79%

Structurally Oriented Nano-Sheets in Co Thin Films: Changing Their Anisotropic Physical Properties by Thermally-Induced Relaxation

et al. 2017

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We show how nanocrystalline Co films formed by separated oblique nano-sheets display anisotropy in their resistivity, magnetization process, surface nano-morphology and optical transmission. After performing a heat treatment at 270 °C, these anisotropies decrease. This loss has been monitored measuring the resistivity as a function of temperature. The resistivity measured parallel to the direction of the nano-sheets has been constant up to 270 °C, but it decreases when measured perpendicular to the nano-sheets. This suggests the existence of a structural relaxation, which produces the change of the Co nano-sheets during annealing. The changes in the nano-morphology and the local chemical composition of the films at the nanoscale after heating above 270 °C have been analysed by scanning transmission electron microscopy (STEM). Thus, an approach and coalescence of the nano-sheets have been directly visualized. The spectrum of activation energies of this structural relaxation has indicated that the coalescence of the nano-sheets has taken place between 1.2 and 1.7 eV. In addition, an increase in the size of the nano-crystals has occurred in the samples annealed at 400 °C. This study may be relevant for the application in devices working, for example, in the GHz range and to achieve the retention of the anisotropy of these films at higher temperatures.

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“…3(c)]. These data recall the electronic states of Ag films grown on In/Si(111) [40,41] and GaAs(110) [42], which display 1D structural modulations. In those systems the anisotropic band dispersion has been ascribed to the presence of densely distributed stacking fault planes crossing the entire film thickness, which act as finite potential walls for the electron propagation along one in-plane direction.…”

Section: Arpes Analysissupporting

confidence: 56%

Reference plane for the electronic states in thin films on stepped surfaces

et al. 2021

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The question on whether there exists a unique photoelectron reference plane for a stepped solid surface is discussed on the basis of angle-resolved photoelectron spectroscopy data for Ag films grown on Pt(997). Different step morphologies at the surface and interface, revealed by low-energy electron diffraction measurements, result in distinctly different band dispersions of the sp-like quantum well states and of the Shockley surface state. Quantum well standing waves form between the parallel optical surface and interface planes, while the surface state follows the orientation of a local plane tilted with respect to the optical surface. These findings show the connection of the photoelectron reference plane with the local morphology of a solid surface and the spatial extent of the electron wave functions.

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Anisotropic electronic conduction in metal nanofilms grown on a one-dimensional surface superstructure

Cited by 7 publications

References 33 publications

Metallic thin films on stepped surfaces: lateral scattering of quantum well states

Metallic thin films on stepped surfaces: lateral scattering of quantum well states

Structurally Oriented Nano-Sheets in Co Thin Films: Changing Their Anisotropic Physical Properties by Thermally-Induced Relaxation

Reference plane for the electronic states in thin films on stepped surfaces

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