Anisotropic lateral growth in GaAs MOCVD layers on (001) substrates

Asai, Hiromitsu

doi:10.1016/0022-0248(87)90091-1

Cited by 189 publications

(75 citation statements)

References 14 publications

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“…Since the [011] step is initially fully kinked, the arsenic desorption leads to a smaller number of kink sites at this step for group III growth species. At the [011] steps the concentration of incorporation sites for group III species, and therefore the lateral growth rate of GaAs, at small misorientations is hardly influenced by the arsenic partial pressure [5]. However, at larger misorientations especially the straight [011] step will become much rougher as discussed above.…”

Section: Arsenic Coveragementioning

confidence: 96%

“…Due to this reconstruction the steps in the [011] and the [017] directions on the (100) surface show a different behaviour [5,27]. The step in the [011] direction, or A-step, is more undulated than the B-step in the [011] direction [28].…”

Section: Kink Densitymentioning

confidence: 99%

“…It is known that the incorporation process at the surface is influenced by the degree of misorientation of the substrate, resulting in differences in the lateral growth rate and in the impurity concentration [4][5][6][7][8]. An overview of studies on orientation dependence of impurity incorporation during MOVPE growth of III-V compounds has been given by Kondo et al [9].…”

Section: Introductionmentioning

confidence: 99%

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Dependence of indium incorporation upon the substrate misorientation during growth of In x Ga 1 − x As by metalorganic vapour phase epitaxy

Nijenhuis¹,

Hageman²,

Giling³

1996

Journal of Crystal Growth

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The incorporation of indium during growth of InxGa ~ _xAS (with x < 5 × 10 -3) by metalorganic vapour phase epitaxy on GaAs substrates with orientations vicinal to (100) has been studied as a function of the growth temperature, the input mole fraction of trimethylindium (TMI) and the misorientations of the substrates towards (011) and (01~). The average apparent activation energy for indium incorporation is found to be 9.7 kcal mol-J, which is explained by the presence of indium adducts in the gas phase at low temperatures which decompose at higher growth temperatures. The differences in indium concentrations as a function of the direction and the degree of the misorientation are explained by considering the incorporation processes at the group III sublattice sites at the steps, thereby taking into account the arsenic coverage of the surface. The behaviour of the indium incorporation as a function of the misorientation is described by diffusion of growth species towards the steps, according to the BCF theory, which is counteracted by preferential arsenic desorption from the step edges.

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Section: Arsenic Coveragementioning

confidence: 96%

Section: Kink Densitymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Dependence of indium incorporation upon the substrate misorientation during growth of In x Ga 1 − x As by metalorganic vapour phase epitaxy

Nijenhuis¹,

Hageman²,

Giling³

1996

Journal of Crystal Growth

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“…These peaks instead form concurrently with large faceted hillocks on the InGaAs(110) surface. Facetdependent incorporation rates have been observed for a number of materials including GaAs, 118,119 InGaN, 120 and InGaAsP. 99,100 For the latter two materials, different incorporation rates of each atomic species produce orientationdependent alloy compositions.…”

Section: Ingaas(110): Photoluminescencementioning

confidence: 99%

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Yerino

Liang

Huffaker

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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For more than 50 years, research into III-V compound semiconductors has focused almost exclusively on materials grown on (001)-oriented substrates. In part, this is due to the relative ease with which III-Vs can be grown on (001) surfaces. However, in recent years, a number of key technologies have emerged that could be realized, or vastly improved, by the ability to also grow high-quality III-Vs on (111)-or (110)-oriented substrates These applications include: nextgeneration field-effect transistors, novel quantum dots, entangled photon emitters, spintronics, topological insulators, and transition metal dichalcogenides. The first purpose of this paper is to present a comprehensive review of the literature concerning growth by molecular beam epitaxy (MBE) of III-Vs on (111) and (110) substrates. The second is to describe our recent experimental findings on the growth, morphology, electrical, and optical properties of layers grown on non-(001) InP wafers. Taking InP(111)A, InP(111)B, and InP(110) substrates in turn, the authors systematically discuss growth of both In 0.52 Al 0.48 As and In 0.53 Ga 0.47 As on these surfaces. For each material system, the authors identify the main challenges for growth, and the key growth parameter-property relationships, trends, and interdependencies. The authors conclude with a section summarizing the MBE conditions needed to optimize the structural, optical and electrical properties of GaAs, InAlAs and InGaAs grown with (111) and (110) orientations. In most cases, the MBE growth parameters the authors recommend will enable the reader to grow high-quality material on these increasingly important non-(001) surfaces, paving the way for exciting technological advances.

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“…This incorporation probability of Ga is related to the density of the dangling bonds at the step edge, and the dangling bond density is related to the availability of As at the step edge. 7 Hence, low As coverage is the key factor to ensure that the migrating Ga atoms are not incorporated into steps and kinks at the corners and thereby preventing lateral overgrowth.…”

mentioning

confidence: 99%

Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy

Mohan

Nakajima

Akabori

et al. 2003

Applied Physics Letters

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Artificial two-dimensional semiconductor Kagome lattice structures formed by quantum wires can show ferromagnetism when the flatband is half filled, even though it does not have any magnetic elements. Experimental realization of such a Kagome lattice structure is reported. The structure, with different pattern periods, was formed with GaAs quantum wires by selective area metalorganic vapor phase epitaxy on GaAs ͑111͒B substrates. To overcome the lateral overgrowth and to improve the shape of smaller period pattern, flow rate modulation epitaxy was employed and a GaAs Kagome lattice structure with 1 m period was effectively grown.

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Anisotropic lateral growth in GaAs MOCVD layers on (001) substrates

Cited by 189 publications

References 14 publications

Dependence of indium incorporation upon the substrate misorientation during growth of In x Ga 1 − x As by metalorganic vapour phase epitaxy

Dependence of indium incorporation upon the substrate misorientation during growth of In x Ga 1 − x As by metalorganic vapour phase epitaxy

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy

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