Anisotropic longitudinal electron diffusion coefficient in wurtzite gallium nitride

Wang, Shulong; Liu, Hongxia; Fan, Jibin; Ma, Fang; Lei, Xiao-Yi

doi:10.1007/s00339-012-7451-z

Cited by 2 publications

(4 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On the other hand, the v s values are almost equal in both orientations. 16) By the theoretical analysis mentioned above, we can confirm that the intrinsic response frequency of the nonpolar-oriented RTD is higher than that of the polar-oriented RTD. In summary, the performance of nonpolar RTDs based on GaN has been theoretically investigated.…”

mentioning

confidence: 55%

“…The velocity-field and impact ionization coefficient curves in different orientations are both obtained by the ensemble Monte Carlo method. 6,7,15,16) Then, the obtained curves are used to fit the corresponding coefficients in the high-field-mobility and impact ionization models, which are both embedded into the Silvaco ATLAS numerical simulator. When the linear interpolation is used to calculate the band gap and the electronic effective mass of AlGaN, which acts as the barrier layer of RTD, the bending factors dependent on the orientation are taken into account.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Performance of resonant tunneling diodes based on the nonpolar-oriented AlGaN/GaN heterostructures

Rong¹,

Yang²,

Zhao³

et al. 2018

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The performance of resonant tunneling diodes (RTDs) based on nonpolar-oriented AlGaN/GaN heterostructures has been theoretically investigated by numerical simulation. Simulation results show that the RTDs grown along the nonpolar orientation can yield the current-voltage (I-V ) characteristics with the peak current, the peak-to-valley ratio (PVCR), and the peak voltage of about 3.5 times and 1.5 times higher and 1.1 times lower than those of RTDs grown along the conventional polar orientation, respectively. The results also show excellent symmetry, high reproducibility of I-V characteristics, and high intrinsic response frequency.

show abstract

mentioning

confidence: 55%

mentioning

confidence: 99%

Performance of resonant tunneling diodes based on the nonpolar-oriented AlGaN/GaN heterostructures

Rong¹,

Yang²,

Zhao³

et al. 2018

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…The traditional theory based on drift-diffusion model believes that when carriers are scattered from the low energy valley into high energy valley, the mobility should be reduced, which is also the origin of negative differential resistance in group III-V semiconductors. The traditional theory may be true in GaN material simulation [22], but may not be right in actual device, where there are many other factors contributing to the current. As well known that the current density depends on electron density and velocity (j / nve, n represents electron density, v represents electron velocity).…”

Section: Simulations Modelmentioning

confidence: 97%

“…The scattering with ionized impurities uses the Brooks-Herring method [19]. The material parameters of wurtzite GaN are collected by the published references [20][21][22], as shown in Table 1.…”

Section: Simulations Modelmentioning

confidence: 99%

Research on the origin of negative effect in uniform doping GaN-based Gunn diode under THz frequency

et al. 2016

Self Cite

View full text Add to dashboard Cite

The transport properties of GaN-based uniform doping Gunn diode are calculated by an ensemble Monte Carlo method. The drift velocity, electron density, and electric field distribution as a function of time in the device are illustrated under direct current (DC) and alternating current (AC) bias condition. With the help of port current, the relationship between electron transport status and port current can be acquired, which will be useful to understand the origin of negative differential resistance and guide the device design. Different from the traditional opinion, the maximum current do not appear at the same time when electron accumulation domain arrives at device anode. The reason is that when electron accumulation domain comes into heavily doped anode, the velocity will be decelerated a lot for highly ionized impurity scattering, and the electrons in the domain will be used to neutralize positive ion region which provides the electrons during formation of the domain. Some researchers believe that the electrons in the domain come from heavily doped cathode region, but our simulation shows clearly that the electrons come from heavily doped anode side. Finally, the AC simulation shows the possibility of negative differential résistance in GaN diode under THz frequency. What is more, AC simulation result has the same tendency with DC simulation.

show abstract

Anisotropic longitudinal electron diffusion coefficient in wurtzite gallium nitride

Cited by 2 publications

References 23 publications

Performance of resonant tunneling diodes based on the nonpolar-oriented AlGaN/GaN heterostructures

Performance of resonant tunneling diodes based on the nonpolar-oriented AlGaN/GaN heterostructures

Research on the origin of negative effect in uniform doping GaN-based Gunn diode under THz frequency

Contact Info

Product

Resources

About