Anisotropic magnetoresistance and spin-valve effect in all-metal mesoscopic spin-valve devices

Staa, Alexander van; Meier, Guido

doi:10.1016/j.physe.2005.11.006

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Cited by 9 publications

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“…It was observed that the magnitude of the MR does not change. The contribution from the electrode in addition to spin MR has also been observed in metallic SV devices [13], [14].…”

Section: Resultsmentioning

confidence: 80%

Comparison of Room Temperature Polymeric Spin-Valves With Different Organic Components

et al. 2008

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We have compared the magnetoresistance of organic spin-valve (SV) structures with regioregular and regiorandom poly (3-hexylthiophene) (RR-P3HT and RRa-P3HT), hole transporting polymers, as the spacer layers sandwiched between two ferromagnetic electrodes. A SV structure of Fe 50 Co 50 /RRa-P3HT/Ni 81 Fe 19 was the test structure used. At room temperature, we observed the co-occurrence of two magnetoresistance effects, the spin magnetoresistance and magnetoresistance in the electrodes.Index Terms-Magnetoresistance, spin valves and spintronics.

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