Comparison of Room Temperature Polymeric Spin-Valves With Different Organic Components

Abstract

We have compared the magnetoresistance of organic spin-valve (SV) structures with regioregular and regiorandom poly (3-hexylthiophene) (RR-P3HT and RRa-P3HT), hole transporting polymers, as the spacer layers sandwiched between two ferromagnetic electrodes. A SV structure of Fe 50 Co 50 /RRa-P3HT/Ni 81 Fe 19 was the test structure used. At room temperature, we observed the co-occurrence of two magnetoresistance effects, the spin magnetoresistance and magnetoresistance in the electrodes.Index Terms-Magnetoresistance, spin valves and spintronics.

Large magnetoresistance of thick polymer devices having La0.67Sr0.33MnO3 electrodes

“…25 The mobility in organics is strongly field dependent and follows the Poole-Frenkel law. However, the low yield of stable devices in our studies and the widely varying MR ratios reported by others 5,6,[8][9][10] in vertical SV structures highlight the need for detailed investigations aimed at understanding the chemical, structural, and morphological properties that influence spin transport in organic materials. This can lead, through a reduction in transit time across the polymer, to an enhancement in MR with increasing bias such as we observe.…”

“…A focus of recent research has been to incorporate OSCs into spin-based electronics. [5][6][7][8][9][10] Large MR was observed at low T but only 1.5% at 300 K in 100 nm thick rr-P3HT based SVs. Magnetoresistance ͑MR͒ ratios of ϳ10% have been observed at low temperature ͑T͒ but the MR decreases rapidly with T and is generally Յ1% at 300 K. 1 The majority of SV studies on thicker ͑Ն10 nm͒ layers of molecular-OSCs report widely varying MR values and spin diffusion lengths, and even reach conflicting conclusions.…”

Magnetic, Surface And Elemental Characterization of FECO (50:50, 70:30) 50nm Thin Film Grown By Ultra High Vacuum DC Magnetron Sputtering on Silicon (001) Substrate

“…[5,6].FeCo spin injector based spin valve devices was fabricated. Bottom electrode Fe 50 Co 50 (40nm) was selected as a spin injector withwork function (4.9eV) which was close to the organic semiconductor homo level [7]. T. Moriyama et al prepared MTJs device with FeCo as the spin injector and detector [8].…”

Topographic Study of Fe70co30and Ni80fe20of Various Thickness for Spin Valve Application

“…FeCo spin injector based spin valveGMR devices were fabricated. Dhana et al prepared organic spin valve device with Fe 50 Co 50 (40nm) as a spin injector with work function (4.9eV) was close to the organic semiconductor homo level [10]. T. Moriyama et al prepared MTJs device with FeCo as the spin injector and detector [6].…”