Anisotropic polarization of dislocation-related luminescence in thin ZnSe films

Worschech, L.; Ossau, W.; Waag, A.; Łandwehr, G.; Hilpert, Uwe; Schreiber, J.; Rebane, Yu. T.; Shreter, Yu. G.

doi:10.1016/s0921-4526(99)00548-7

Cited by 9 publications

(15 citation statements)

References 12 publications

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“…The mapping consists of two groups of PL emissions: one in the vicinity of 442 nm (2.805 eV) corresponding to heavy-(hh) and light-hole (lh) components of the free exciton (marked X hh and X lh , the latter much weaker but unmistakable); and the second group-at 454.5 nm (2.727 eV)-corresponding to the excitonic emission line that we have labeled Z 0 and its phonon replica. 7,14 In the case of Y 0 , each peak in the multiplet was interpreted as the emission from a dislocation line segment corresponding to a specific thickness of stacking faults between the 30°/90°Shockley partials. This emission can only be seen in a very limited area coinciding exactly with the position of the blue streak in the inset, so that it is safe to assume that the streak and the Z 0 peak are one and the same.…”

Section: Resultsmentioning

confidence: 99%

“…[1][2][3] The small lattice mismatch of −2.7ϫ 10 −3 between ZnSe and GaAs results in a low density of misfit dislocations after the ZnSe layer reaches its critical thickness d c , which theoretically is determined to be about 135 nm. [6][7][8][9][10][11][12][13][14] So far the vast majority of the studies of ZnSe-based systems has been carried out on structures grown by molecular beam epitaxy (MBE) on (001)GaAs surfaces. These dislocations have been studied intensively by a variety of methods-primarily structural, but also optical.…”

Section: Introductionmentioning

confidence: 99%

“…8,9,11,12,14 More specifically, since 60°dislocations dissociate into 30°and 90°Shockley partial dislocations, and since dissociated screw dislocation segments do not exhibit luminescence, the 30°partials may be excluded as radiative recombination centers. 8,9,11,12,14 More specifically, since 60°dislocations dissociate into 30°and 90°Shockley partial dislocations, and since dissociated screw dislocation segments do not exhibit luminescence, the 30°partials may be excluded as radiative recombination centers.…”

Section: Introductionmentioning

confidence: 99%

“…8,9,11,12,14 More specifically, since 60°dislocations dissociate into 30°and 90°Shockley partial dislocations, and since dissociated screw dislocation segments do not exhibit luminescence, the 30°partials may be excluded as radiative recombination centers. 6,10,11,14 The degree of the linear polarization depends on the ZnSe layer thickness, and for relatively thin layers (up to 500 nm) ranges between 50% and 85%. 6 The Y 0 exciton emission observed in ZnSe(001) films is characterized by certain specific characteristics, clearly revealed by PL and cathodoluminescence studies.…”

Section: Introductionmentioning

confidence: 99%

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Observation of photoluminescence related to Lomer–Cottrell-like dislocations in ZnSe epilayers grown on in situ cleaved (110)GaAs surfaces

Kutrowski

Wójtowicz

Cywiński

et al. 2004

Journal of Applied Physics

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We have performed microphotoluminescence (µ-PL) experiments on ZnSe epilayers grown by molecular beam epitaxy on (110)GaAs surfaces cleaved in situ. The experiments revealed a dislocation-related PL emission at 2.72 eV (henceforth referred to as Z 0 ), which is distinctly different from the Y 0 exciton line commonly observed in ZnSe, although it shows many characteristics similar to the Y 0 emission (such as fine structure, linear polarization, and phonon replicas). Both the Z 0 and the Y 0 emissions are clearly seen under the microscope in the form of long, narrow blue streaks oriented along the [Ϫ110] direction. The Z 0 line is strongly linearly polarized in the direction perpendicular to [Ϫ110] (i.e., along [001]) and shows an unusually small Huang-Rhys factor, S = 0.13. Using the concept of a dislocation exciton, we interpret the Z 0 line as the recombination of an exciton bound to a dislocation whose Burgers vector is reminiscent of the Lomer-Cottrell dislocation, and differs from that responsible for the Y 0 emission.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…8,9,11,12,14 More specifically, since 60°dislocations dissociate into 30°and 90°Shockley partial dislocations, and since dissociated screw dislocation segments do not exhibit luminescence, the 30°partials may be excluded as radiative recombination centers. 6,10,11,14 The degree of the linear polarization depends on the ZnSe layer thickness, and for relatively thin layers (up to 500 nm) ranges between 50% and 85%. 6 The Y 0 exciton emission observed in ZnSe(001) films is characterized by certain specific characteristics, clearly revealed by PL and cathodoluminescence studies.…”

Section: Introductionmentioning

confidence: 99%

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Observation of photoluminescence related to Lomer–Cottrell-like dislocations in ZnSe epilayers grown on in situ cleaved (110)GaAs surfaces

Kutrowski

Wójtowicz

Cywiński

et al. 2004

Journal of Applied Physics

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“…7 By comparing not preferentially polarized luminescence associated with point defects with the strongly linearly polarized Y luminescence in thin ZnSe films it has also been demonstrated, that 60°␣ dislocations play an important role in the relaxation process of thin ZnSe layers. 8,9 Here we report on the anisotropic polarization of nitrogen-doped ZnSe samples. By monitoring the anisotropic polarization of the I 1 N , associated with an exciton bound to the nitrogen acceptor, of a nitrogen doped ZnSe sample, we have detected a maximum in-plane polarization when 800 nm of the surface are removed, revealing an inhomogeneous vertical strain profile.…”

mentioning

confidence: 94%