Luminescence Studies on Plastic Stress Relaxation in ZnSe/GaAs(001)

Schreiber, J.; Hilpert, Uwe; Höring, L.; Worschech, L.; König, Barbara; Ossau, W.; Waag, A.; Landwehr, G.

doi:10.1002/1521-3951(200011)222:1<169::aid-pssb169>3.0.co;2-e

Cited by 11 publications

(3 citation statements)

References 8 publications

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“…Preferential formation of dissociated dislocations aligned in ½1 1 10 have been observed by transmission electron microscope investigations in epitaxially grown (001) ZnSe films [9], just above the critical layer thickness. During this transient relaxation state, the appearing layer stress is clearly anisotropic [8].In the present letter we report on cathodoluminescence studies analyzing lateral differences of the spectral splitting of the Y line in a thin ZnSe film. The Y line originates most frequently from 2 mm wide dislocated areas, exclusively aligned collinearly to ½1 1 10, differing locally by the number and peak energies of individual Y line subcomponents.…”

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confidence: 97%

“…In contrast, dislocation multiplication is required in the framework of the Dodson-Tsao model. Dislocation nucleation at the surface of the epilayer has been considered by various authors [7,8]. Surface nucleation of dislocation half-loops starts when the layer thickness exceeds a critical value.…”

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Spectroscopy of Individual Dislocation Bundles in Thin ZnSe Films

Hilpert

Worschech

Rudloff³

et al. 2001

phys. stat. sol. (a)

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Introduction In ZnSe the prominent Y line at 2.6 eV has been attributed to extended defects [1][2][3]. Very recently the radiative recombination of an exciton bound to a dissociated 60 a-type glide dislocation has been revealed as origin of the emission. Structural differences of the particular dislocation core have been associated with a spectral splitting of the Y line, which gives rise to a characteristic peak series [4]. The current understanding of the strain relaxation processes in mismatched heterostructures is ascribed to the models of Matthews-Blakeslee [5] and DodsonTsao [6], respectively. In the first one, threading dislocations breaking through the heterointerface and ending up in the layer surface are assumed to be an essential precondition for the relaxation process. In contrast, dislocation multiplication is required in the framework of the Dodson-Tsao model. Dislocation nucleation at the surface of the epilayer has been considered by various authors [7,8]. Surface nucleation of dislocation half-loops starts when the layer thickness exceeds a critical value. Subsequent strain driven propagation and interaction of dislocations cause major plastic relaxation and realize a final misfit dislocation network. Preferential formation of dissociated dislocations aligned in ½1 1 10 have been observed by transmission electron microscope investigations in epitaxially grown (001) ZnSe films [9], just above the critical layer thickness. During this transient relaxation state, the appearing layer stress is clearly anisotropic [8].In the present letter we report on cathodoluminescence studies analyzing lateral differences of the spectral splitting of the Y line in a thin ZnSe film. The Y line originates most frequently from 2 mm wide dislocated areas, exclusively aligned collinearly to ½1 1 10, differing locally by the number and peak energies of individual Y line subcomponents. We explain our findings by the formation of dislocation bundles consisting of parallel and dissociated a glide dislocations. These dislocation bundles are supposed to be generated by surface nucleation and slid into the interior of the ZnSe film.

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confidence: 87%

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confidence: 97%

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Spectroscopy of Individual Dislocation Bundles in Thin ZnSe Films

Hilpert

Worschech

Rudloff³

et al. 2001

phys. stat. sol. (a)

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Cathodoluminescence in Scanning and Transmission Electron Microscopies

Ohno

Takeda

2012

In‐Situ Electron Microscopy

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In situ analysis of optoelectronic properties of dislocations in ZnO in TEM observations

Ohno

Taishi

Yonenaga

2009

Physica Status Solidi (a)

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Extended defects acting as non‐radiative recombination center or those acting as radiative one were, respectively, studied by transmission electron microscopy under the illumination of a monochromatic light or cathodoluminescence spectroscopy combined with light illumination. By means of this method, defect levels associated with dislocations in ZnO, which were introduced at elevated temperatures above 923 K, were determined. It was proposed that (i) a screw dislocation, presumably acting as non‐radiative recombination center, glides under the illumination of a light with photon energy above 2.48–2.61 eV, due to an electron–hole recombination at a defect level of 2.48–2.61 eV depth, and (ii) a mixed dislocation acts as radiative recombination center with a defect level of 3.1 eV depth.

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Luminescence Studies on Plastic Stress Relaxation in ZnSe/GaAs(001)

Cited by 11 publications

References 8 publications

Spectroscopy of Individual Dislocation Bundles in Thin ZnSe Films

Spectroscopy of Individual Dislocation Bundles in Thin ZnSe Films

Cathodoluminescence in Scanning and Transmission Electron Microscopies

In situ analysis of optoelectronic properties of dislocations in ZnO in TEM observations

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