Anisotropic size effects in semiconductors and semimetals

Rashba, É.I.; Gribnikov, Z.S.; Kravchenko, V. Ya.

doi:10.3367/ufnr.0119.197605a.0003

Cited by 27 publications

(3 citation statements)

References 4 publications

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“…The two former cases were examined in [5, 61. In the present paper, the symmetrical part of the distribution functionf,(c, r) is found for the electron gas heating controlled by the inequalities (3). It is evident that the electron temperature has not enough time to be formed even if v,, % f, and the energy received from the field goes out through the lateral surfaces due to the thermal conductivity.…”

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confidence: 57%

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The Warm‐Electron Distribution Function in the Energy Noncollision Plasma in Submicron Semiconductor Layers

Gurevich¹,

Logvinov²

1992

Physica Status Solidi (b)

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The warm-electron distribution function is obtained from the kinetic equation in semiconductor submicron layers under the assumption that the surface energy relaxation is considerably higher than the bulk energy relaxation rate and the frequency of the electron-electron interactions as well. A divergence in the point c = 0 is shown (where c is the electron energy) if the surface scatterers are acoustic phonons. The reason of this anomaly is that small energy electrons have infinitly high partial electric conductivity while their energy relaxation rate turns to zero. In order to obtain the correct results it is necessary to take into account the e-e interaction between small and high energy electrons. This interaction leads to energy pumping from one carrier group to another and then to the external thermostats.Unter der Annahme, dalj die Oberflachenenergierelaxation sowohl betrachtlich hoher als die Volunienenergierelaxationsrate als auch als die Frequenz der Elektron-Elektron-Wechselwirkungen ist, wird die Verteilungsfunktion warmer Elektronen in Halbleiter-Submikrometerschichten aus den kinetischen Gleichungen erhalten. Es wird gezeigt, daIj eine Divergenz im Punkt c = 0 (wo E die Elektronenenergie ist) existiert, wenn die Oberflachenstreuer akustische Phononen sind. Der Grund fur diese Anomalie besteht darin, daIj die Elektronen mit geringer Energie eine unendlich hohe elektrische Partialleitfahigkeit besitzen, wahrend ihre Encrgierelaxationsrate gegen null geht. Urn korrekte Ergebnisse zu erhalten, ist es notwendig, die e-e-Wechselwirkung zwischen Elektronen mit geringer und hoherer Energie zu berucksichtigen. Diese Wechselwirkung fiihrt zum Energiepumpen yon einer Tragergruppe zur anderen und dann zu auBeren Thermostaten.

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confidence: 57%

“…where l,, is the e-e interaction length [3], d is the surface relaxation length equal to d = u ( t : ) / V m [5], fiS(c) = s ( E ) /~, where S ( E ) is the surface relaxation rate [5] ;…”

Section: Introductionmentioning

confidence: 99%

The Warm‐Electron Distribution Function in the Energy Noncollision Plasma in Submicron Semiconductor Layers

Gurevich¹,

Logvinov²

1992

Physica Status Solidi (b)

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“…3.2.1, there is a strong boundary effect changing that behavior and leading to nonsaturating, linear magnetoresistance (at charge neutrality) [87] that is somewhat similar to the edge effects considered in Ref. [86,274]. The key point is that the above bulk effect is incompatible with finite size geometry: assuming that the bulk current is flowing along the channel, the lateral quasiparticle current must flow across the channel and hence must vanish at both boundaries.…”

Section: Known Solutions To Hydrodynamic Equations In Electronic Systemsmentioning

confidence: 71%

Hydrodynamic approach to two-dimensional electron systems

Narozhny

2022

Riv. Nuovo Cim.

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The last few years have seen an explosion of interest in hydrodynamic effects in interacting electron systems in ultra-pure materials. One such material, graphene, is not only an excellent platform for the experimental realization of the hydrodynamic flow of electrons, but also allows for a controlled derivation of the hydrodynamic equations on the basis of kinetic theory. The resulting hydrodynamic theory of electronic transport in graphene yields quantitative predictions for experimentally relevant quantities, e.g., viscosity, electrical conductivity, etc. Here I review recent theoretical advances in the field, compare the hydrodynamic theory of charge carriers in graphene with relativistic hydrodynamics and recent experiments, and discuss applications of hydrodynamic approach to novel materials beyond graphene.

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Size Effect and Temperature Dependence of the Electrical Resistance in Bismuth Single Crystals of High Perfection

Kraak

Kühl

Thom

et al. 1981

Physica Status Solidi (b)

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Bi single crystals of high perfection (having extremely high resistance ratios r4.2 = e290 K/@4.2 9) are grown by the mould growing method. I n these crystals, the thickness dependence of the resistance ratio ~4 . 2 and the temperature dependence of the electrical resistance are investigated in a temperature range between 2 and 77 K. I n the range of the diffusion size effect, a markedly different behaviour is found to occur in the thickness dependence of the two crystal orientations investigated (j I( C,; j (1 CJ. An anisotropy of the slope of the Ta-terms is detected in the temperature dependences of the electrical resistance in the temperature interval from 2 to 16 K. Nach dem Formzuchtungsverfahren werden Bi-Einkristalle hoher Perfektion (mit extrem hohen

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Anisotropic size effects in semiconductors and semimetals

Cited by 27 publications

References 4 publications

The Warm‐Electron Distribution Function in the Energy Noncollision Plasma in Submicron Semiconductor Layers

The Warm‐Electron Distribution Function in the Energy Noncollision Plasma in Submicron Semiconductor Layers

Hydrodynamic approach to two-dimensional electron systems

Size Effect and Temperature Dependence of the Electrical Resistance in Bismuth Single Crystals of High Perfection

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