Anisotropic transport in graphene on SiC substrate with periodic nanofacets

Odaka, S.; Miyazaki, Hisao; Li, Song Lin; Kanda, Akinobu; Morita, Kouhei; Tanaka, Satoru; Miyata, Yasumitsu; Kataura, Hiromichi; Tsukagoshi, Kazuhito; Aoyagi, Yoshinobu

doi:10.1063/1.3309701

Cited by 29 publications

(25 citation statements)

References 27 publications

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“…Recent measurements of electronic conduction for the singleand double-layer graphenes on a vicinal SiC͑0001͒ substrate 19 indicate anisotropic electron transport due to the curved graphene at the step edges of the substrate. The resistance is smaller in the direction parallel to the step edge than that in the perpendicular direction consistently with the present ARPES result.…”

Section: Resultsmentioning

confidence: 99%

Shape, width, and replicas ofπbands of single-layer graphene grown on Si-terminated vicinal SiC(0001)

et al. 2010

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Massless bands of graphene grown on a SiC͑0001͒ substrate can be affected by the scattering at the boundaries and the interface superstructure. We investigated the band structure and width of the single-and double-layer graphenes grown on a vicinal SiC͑0001͒ substrate using angle-resolved photoemission spectroscopy. The electron scattering at the substrate steps makes the spectrum width anisotropic but no difference occurs in the band shape. Quasi-2 ϫ 2 replicas of the band due to the interface 6 ͱ 3 ϫ 6 ͱ 3R30°superstructure were observed in the single-layer graphene while they were absent in the double-layer graphene.

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Section: Resultsmentioning

confidence: 99%

Shape, width, and replicas ofπbands of single-layer graphene grown on Si-terminated vicinal SiC(0001)

et al. 2010

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“…The quality of the graphene layers on the Ar pretreated substrate is demonstrated by room temperature nano-scale electrical transport measurements with an Omicron UHV nanoprobe system [23] in linear four-probe configuration (inset in figure 5) which is sensitive solely to reported experimental values. [23], [24] The much smaller anisotropy for the Ar pre-annealed graphene sample shows that the origin of increased resistivity discussed in the literature, namely increased electron scattering near the terrace step edges caused by Si atom accumulation [25], defects [26], or metallic bilayer stripes [14] are not relevant for this type of graphene. It is noticeable that the absolute resistance values for the H pretreated sample are about twice as high as for the Ar pre-annealed one when we consider only parallel measurements which might be due to different electron densities or mobilities.…”

Section: Electrical and Magneto-transport Characterizationmentioning

confidence: 86%

Epitaxial graphene on SiC: modification of structural and electron transport properties by substrate pretreatment

Kruskopf

Pierz

Wundrack

et al. 2015

J. Phys.: Condens. Matter

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The electrical transport properties of epitaxial graphene layers are correlated with the SiC surface morphology. In this study we show by atomic force microscopy and Raman measurements that the surface morphology and the structure of the epitaxial graphene layers change significantly when different pretreatment procedures are applied to nearly on-axis 6H-SiC(0 0 0 1) substrates. It turns out that the often used hydrogen etching of the substrate is responsible for undesirable high macro-steps evolving during graphene growth. A more advantageous type of sub-nanometer stepped graphene layers is obtained with a new method: a high-temperature conditioning of the SiC surface in argon atmosphere. The results can be explained by the observed graphene buffer layer domains after the conditioning process which suppress giant step bunching and graphene step flow growth. The superior electronic quality is demonstrated by a less extrinsic resistance anisotropy obtained in nano-probe transport experiments and by the excellent quantization of the Hall resistance in low-temperature magneto-transport measurements. The quantum Hall resistance agrees with the nominal value (half of the von Klitzing constant) within a standard deviation of 4.5 × 10(-9) which qualifies this method for the fabrication of electrical quantum standards.

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“…Both Si and C‐face 6H‐SiC were studied for graphene transistors, and graphene on the Si‐face of 6H‐SiC was reported to have a higher off‐to‐on resistance ratio but a much smaller carrier density compared to the C‐face 221. Anisotropic transport properties of epitaxial graphene field‐emission transistors (FETs) are associated with faceting of SiC and can be observed for (110 n ) steps 222. This is associated with different properties of graphene on basal plane and (110 n ) SiC.…”

Section: Examples Of Applications Of Cdcmentioning

confidence: 99%

Carbide‐Derived Carbons – From Porous Networks to Nanotubes and Graphene

Presser

Heon

Gogotsi

2011

Adv Funct Materials

624

492

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from carbides has attracted special attention lately. [ 3,4 ] Carbide-derived carbons (CDCs) encompass a large group of carbons ranging from extremely disordered to highly ordered structures ( Figure 1 ). The carbon structure that results from removal of the metal or metalloid atom(s) from the carbide depends on the synthesis method (halogenation, hydrothermal treatment, vacuum decomposition, etc.), applied temperature, pressure, and choice of carbide precursor.The growing interest in this fi eld is refl ected by a rapidly increasing number of publications and patents. A signifi cant progress in CDC research has been seen in several fi elds. Various carbide precursors have been systematically studied. Studies on binary carbides with different grain sizes show the possibility of low-temperature carbon formation for nanopowders. Also, a better understanding of graphene formation during high-temperature vacuum decomposition of silicon carbide has been achieved since SiC single crystals are now available in large sizes with extremely low defect concentrations and an almost atomically fl at surface fi nish. [ 8 ] CDC applications as electrode materials in electric double layer capacitors have attracted much attention lately. [ 9 ] The unique properties of porous CDC obtained by halogenation, such as a high specifi c surface area and tunable pore size with a narrow size distribution, make it an ideal material for sorbents or supercapacitor electrodes. CDCs have been derived from many precursors (SiC, TiC, Mo 2 C, VC, etc.) using a variety of treatment conditions that lead to a broad range of useful properties. Furthermore, graphene, [ 10 ] nanotubes, [ 11 ] and even nanodiamond [ 12 ] can be produced from carbide precursors. Their applications naturally differ from those of porous CDC.The last comprehensive journal review on this subject was published about fi fteen years ago in Russian; [ 13 ] book chapters published later [ 3,4 , 14 ] are less accessible and require updating due to rapid progress in the fi eld over the past few years. The most recent review of CDC [ 14 ] covers only energy-related applications. Therefore, a comprehensive review on the fi eld is long overdue. The goal of this article is to show how a variety of carbon structures can be produced from carbides, to explain how those structures can be controlled on the nanometer and subnanometer scale, and to describe CDC properties that are benefi cial for a number of applications. Carbide-Derived Carbons -From Porous Networks to Nanotubes and GrapheneCarbide-derived carbons (CDCs) are a large family of carbon materials derived from carbide precursors that are transformed into pure carbon via physical (e.g., thermal decomposition) or chemical (e.g., halogenation) processes. Structurally, CDC ranges from amorphous carbon to graphite, carbon nanotubes or graphene. For halogenated carbides, a high level of control over the resulting amorphous porous carbon structure is possible by changing the synthesis conditions and carbide precursor. The large number of...

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Anisotropic transport in graphene on SiC substrate with periodic nanofacets

Cited by 29 publications

References 27 publications

Shape, width, and replicas ofπbands of single-layer graphene grown on Si-terminated vicinal SiC(0001)

Shape, width, and replicas ofπbands of single-layer graphene grown on Si-terminated vicinal SiC(0001)

Epitaxial graphene on SiC: modification of structural and electron transport properties by substrate pretreatment

Carbide‐Derived Carbons – From Porous Networks to Nanotubes and Graphene

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