Shape, width, and replicas of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>π</mml:mi></mml:math>bands of single-layer graphene grown on Si-terminated vicinal SiC(0001)

Nakatsuji, Kan; Shibata, Yoshiyuki; Niikura, Ryota; Komori, Fumio; Morita, Kouhei; Tanaka, Satoru

doi:10.1103/physrevb.82.045428

Cited by 22 publications

(20 citation statements)

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“…35 At first sight, one would be tempted to interpret the tertiary cones in terms of replicas, like those observed on the SiC(0001) Si-face. 34 However, those replicas are due to registry between the (6 √ 3×6 √ 3)R30…”

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confidence: 99%

Microscopic correlation between chemical and electronic states in epitaxial graphene on SiC(0001¯)

et al. 2011

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We present energy filtered electron emission spectromicroscopy with spatial and wave-vector resolution on few layer epitaxial graphene on SiC(0001) grown by furnace annealing. Low energy electron microscopy shows that more than 80% of the sample is covered by 2-3 graphene layers. C1s spectromicroscopy provides an independent measurement of the graphene thickness distribution map. The work function, measured by photoelectron emission microscopy (PEEM), varies across the surface from 4.34 to 4.50eV according to both the graphene thickness and the graphene-SiC interface chemical state. At least two SiC surface chemical states (i.e., two different SiC surface structures) are present at the graphene/SiC interface. Charge transfer occurs at each graphene/SiC interface. K-space PEEM gives 3D maps of the |k | π − π * band dispersion in micron scale regions show that the Dirac point shifts as a function of graphene thickness. Novel Bragg diffraction of the Dirac cones via the superlattice formed by the commensurately rotated graphene sheets is observed. The experiments underline the importance of lateral and spectroscopic resolution on the scale of future electronic devices in order to precisely characterize the transport properties and band alignments.

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confidence: 99%

Microscopic correlation between chemical and electronic states in epitaxial graphene on SiC(0001¯)

et al. 2011

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“…1(a) and 1(c), we notice that the spectrum width around K 0 • for the 8 • -off substrate is larger than that at K 180 • for the 4 • -off substrate. The difference in the spectrum width is attributed to that of the step density of the substrate along the [1100] direction, 19 but not to the defects on the terrace as shown in the above STM images. On the present substrates, curved graphene covers the substrate steps with few defects as in Fig.…”

Section: Figures 1(a)-1(d)mentioning

confidence: 81%

Uniaxial deformation of graphene Dirac cone on a vicinal SiC substrate

et al. 2012

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Uniaxial deformation of the conical conduction band of single-layer graphene is investigated on a SiC(0001) substrate vicinal to the [1100] direction using angle-resolved photoemission spectroscopy. The substrate surface consists of highly anisotropic terraces with sub-10 nm width in the [1100] direction as confirmed by scanning tunneling microscopy and atomic force microscopy. Graphene covers all the substrate surface including the substrate steps. The substrate provides a unidirectional potential for the graphene on that. The group velocities of the conduction band at K points are reduced in the direction parallel to the strong potential modulation while they are unchanged in the perpendicular direction.

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“…In the Si-face case, the band gap of around 0.2 eV in the Dirac cone is reported theoretically and experimentally [25,31,36,71]. The origin of the band gap opening is the A site-B site symmetry breaking effect while the quantum confinement effect is also suggested [30].…”

Section: Atomic and Electronic Structuresmentioning

confidence: 89%

“…For the SiC(0001) Si-face, monolayer or a few layer graphene can be formed [16,18,[22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37]. The formed graphene is epitaxial, which means that the crystal orientation of the graphene matches with that of the substrate.…”

Section: Discussion On Quasi-stable Buffer Layer Structurementioning

confidence: 99%

“…Epitaxial graphene grown on silicon carbide (SiC) surface is attractive because it is formed directly on an insulating substrate [17,18]. Graphene is traditionally grown on SiC(0001) Si-face [16,18,[22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39] or (0001) C-face [22,[40][41][42][43][44][45][46]. Graphene on Si-face is known to have epitaxial relation with the substrate, while that on C-face is randomly stacked.…”

Section: Introductionmentioning

confidence: 99%

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Theoretical Study of Graphene on SiC(11-20) a-Face

Kageshima

Hibino

2016

e-J. Surf. Sci. Nanotech.

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Atomic structures and electronic states of epitaxial graphene on the SiC(1120) a-face are studied based on the first-principles calculation. It is found that the surface can have two types of the surface, the stable quasi-freestanding structure and the quasi-stable buffer layer structure. The neutral nature, the low interface state density, and the absence of large interface dipoles suggest that the epitaxial graphene on the SiC(1120) a-face is appropriate for studying the physical properties of carrier transport. It is also proposed that the existence of the buffer layer is directly related with the epitaxial relation of the formed graphene with the SiC substrate.

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Shape, width, and replicas ofπbands of single-layer graphene grown on Si-terminated vicinal SiC(0001)

Cited by 22 publications

References 21 publications

Microscopic correlation between chemical and electronic states in epitaxial graphene on SiC(0001¯)

Microscopic correlation between chemical and electronic states in epitaxial graphene on SiC(0001¯)

Uniaxial deformation of graphene Dirac cone on a vicinal SiC substrate

Theoretical Study of Graphene on SiC(11-20) a-Face

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