Anisotropic transport investigation through different etching depths in InAs/InAsSb T2SL barrier midwave infrared detector

Arounassalame, Vignesh; Bouschet, Maxime; Alchaar, Rodolphe; Ferreira, R.; Carosella, Francesca; Ramiandrasoa, Anthony; Pérez, Jean-Philippe; Péré‐Laperne, Nicolas; Christol, Philippe; Ribet-Mohamed, I.

doi:10.1016/j.infrared.2022.104315

Cited by 5 publications

(8 citation statements)

References 30 publications

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“…The authors then calculated that the high mobility of InAsSb (>1000 cm 2 V −1 s −1 for bulk) results in an “across‐heterostructure” mobility of 13.4 cm 2 V −1 s −1 . [ 50 ] Notably, this drop in mobility is solely attributable to confinement, as the model neglects any potential imperfections that could further reduce the actual mobility.…”

Section: Competition Between Confinement and Transportmentioning

confidence: 99%

Stop Blaming Hopping Conduction in Nanocrystal Arrays, Use it for Active Photonics!

Ledos,

Dang,

Cavallo

et al. 2024

Adv Materials Technologies

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Nanocrystals (NCs) are now established building blocks for photonic applications. However, their integration for optoelectronics has not yet reached the same level of maturity, in part due to the perceived bottleneck that is the inherent limited mobility resulting from hopping conduction. Significant efforts are made to improve this mobility, notably by tuning the particle surface chemistry to enable larger interparticle electronic coupling, and values of mobility of ≈10 cm2 V−1 s−1 have been achieved. It is acknowledged that this value remains significantly lower than those obtained in 2D electron gases but is on par with the mobility reported for vertical transport in epitaxially grown heterostructures with similar confinement energies. Since there appears to be limited perspectives for further increasing mobility values, a suggestion is made that efforts should instead be directed toward exploring the potential benefits offered by hopping conduction. One of these benefits is the bias dependence of the diffusion length, which plays a key role in designing bias‐reconfigurable optical responses for NC‐based devices. Some recent achievements in building bias‐activated devices will be reviewed and the essential criteria for designing future structures will be discussed. Ultimately, hopping conduction is an opportunity to generate new functionalities that low‐disorder materials would be unable to provide.

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Section: Competition Between Confinement and Transportmentioning

confidence: 99%

Stop Blaming Hopping Conduction in Nanocrystal Arrays, Use it for Active Photonics!

Ledos,

Dang,

Cavallo

et al. 2024

Adv Materials Technologies

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show abstract

“…An adapted Hovel model is used to determine the minority carrier diffusion length (L diff ) and the associated mobility value (µ) 25 . Figure 11 shows the comparison between the experimental QE spectrum recorded at 150 K (V op = -0.4 V) and the calculated spectrum using L diff as fitting parameter.…”

Section: Transportmentioning

confidence: 99%

“…The high mass value along the growth direction (m * HH1 (z) = 2.5 m 0 ), due to strong confinement of heavy holes in the InAs/InAsSb T2SL structure, penalize corresponding mobility. However, the internal quantum efficiency is optimal, demonstrating that the effective hole mobility is a mixing of vertical (along growth z axis) and lateral (in xy plane) contributions 3,[25][26][27] .…”

Section: Transportmentioning

confidence: 99%

Performance analysis of Ga-free T2SL infrared barrier detector

Christol,

Bouschet,

Tornay

et al. 2023

Infrared Technology and Applications XLIX

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Ga-free InAs/InAsSb T2SL XBn detector is now a reliable candidate for high-performance focal plane arrays in the MWIR (3-5μm) domain. However, this T2SL is a very anisotropic quantum structure having a type-IIb band offset alignment where electrons are rather delocalized all over the structure while holes are strongly confined in deep InAsSb quantum well. This configuration could penalize the absorption and the hole minority carrier transport but MWIR detector device without anti reflection coating shows quantum efficiency higher than 50%. Considering results of specific measurements and band structure calculation, possible carrier transport scenario is presented to explain such performance.

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“…Carrier transport characteristics can be measured by minority carrier lifetime and mobility, which can be described by minority carriers' diffusion length. The diffusion length can be calculated by the following formula [14] :…”

Section: Quantum Efficiencymentioning

confidence: 99%

Dark current analysis of pπMn T2SL mid-wavelength infrared detector structure

Zhao,

Han,

Guan

et al. 2023

Third International Computing Imaging Conference (CITA 2023)

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InAs/GaSb Type II Superlattice (T2SL) has become a highly competitive material for Infrared (IR) detector. We designed a pπMn mid-wavelength infrared detector based on the InAs/GaSb T2SL materials and studied the influence of the detector structural parameters on the dark current density magnitude and the Quantum Efficiency (QE) from the theoretical simulation level. Through the simulation of the detector material and structure, the dark current density characteristics at various doping concentrations, the dark current density characteristics and QE at different superlattice material thicknesses, and the temperature dependence of the dark current level are calculated. The M-structure barrier is inserted in between the π and n layers of the T2SL infrared detector structure, and the overall dark current level can be effectively reduced. Under the condition of 77 K, according to the final simulation data results, the dark current density can achieve 9.46×10-8 A/cm2, and the peak QE can achieve 34.3%.

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Anisotropic transport investigation through different etching depths in InAs/InAsSb T2SL barrier midwave infrared detector

Cited by 5 publications

References 30 publications

Stop Blaming Hopping Conduction in Nanocrystal Arrays, Use it for Active Photonics!

Stop Blaming Hopping Conduction in Nanocrystal Arrays, Use it for Active Photonics!

Performance analysis of Ga-free T2SL infrared barrier detector

Dark current analysis of pπMn T2SL mid-wavelength infrared detector structure

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