Anisotropy effects during non-selective epitaxial growth of Si and SiGe materials

Effect of Substrate Faceting on Epitaxial Lead Sulfide Thin Films Deposited from a Solution onto GaAs(100)

“…Several studies reported for both growth and etching processes from the vapor phase showed that the morphology and roughness of the incipient thin films strongly depend on the substrate surface roughness, surface ripples, and faceting, and it is a strong concern in selective epi-growth technologies. − Moreover, Dutartre et al reported that lateral epitaxial overgrowth and epi rounding in narrow lines is strongly controlled by substrate microfaceting effects and slow-growing crystal facets in the Si(100)/SiGe system …”

Reverse terrace graded Si<inf>1&#x2212;x</inf>Ge<inf>x</inf>/Ge/Si(001) virtual substrates grown using RP-CVD on on-axis and 6&#x00B0; off-axis substrates for future developments in III-V materials integration

“…An estimation of the graded regions for both buffer layers show that the on axis graded region is approximately 850nm ± 50nm thicker than the off-axis graded region. The adatom adsorption process and subsequent growth rate in hetero-epitaxy is heavily dependent on the anisotropic density of dangling bonds on the substrate surface [16], [17]. The 6˚ offcut, a relatively high angle, creates step terraced features on the silicon substrate surface.…”