Anisotropy in the wet-etching of semiconductors

Kelly, John J.; Philipsen, Harold

doi:10.1016/j.cossms.2006.04.003

Cited by 56 publications

(37 citation statements)

References 40 publications

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“…Compared to electrochemical machining (ECM), that also allows the processing of conductive materials regardless of their hardness [119], LCM/E's aspect ratio is much smaller [120] but it has good agreement with better resolution [121] and surface roughness [122]. In comparison to direct laser ablation the MRR and aspect ratio of LCM/E are smaller but it involves little heat generation [123] and thus thermal effects do not occur [124]. Due to the required low laser power density, melting is avoided, resulting in high-precision cutting edges without burrs and debris.…”

Section: Laser Chemical Machining/etching (Lcm/e)mentioning

confidence: 91%

Laser Beam Machining, Laser Beam Hybrid Machining, and Micro-channels Applications and Fabrication Techniques

Darwish

Ahmed

Al‐Ahmari

2016

Advanced Structured Materials

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Laser beam machining (LBM) has proven its applications and advantages over almost all the range of engineering materials. It offers its competences from macro machining to micro and nano-machining of simple-to-complex shapes. The flipside of LBM is the existence of universal problems associated with its thermal ablation mechanism. In order to alleviate or reduce the inherent problems of LBM, a massive research has been done during the past decade and in turn build a relatively new route of laser-hybrid processes. The hybrid approaches in laser ablation have demonstrated much improved results in terms of material removal rate, surface integrity, geometrical tolerances, thermal damage, metallurgical alterations and many more. This chapter reviews the research work carried out so far in the area of LBM and its hybrid processes for different materials and shapes.

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Section: Laser Chemical Machining/etching (Lcm/e)mentioning

confidence: 91%

Laser Beam Machining, Laser Beam Hybrid Machining, and Micro-channels Applications and Fabrication Techniques

Darwish

Ahmed

Al‐Ahmari

2016

Advanced Structured Materials

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“…Moreover, avoiding the chemical etching eliminates the restriction on the cavity designs due the influence of crystal orientation on the chemical etching. 29,30 Furthermore, unlike the slot, the pit is compatible with high index contrast ridge waveguide structures. 31,32 More details about the pit characteristics and features and comparison with a slot can be found in previous work.…”

Section: Laser Design and Fabricationmentioning

confidence: 98%

Regrowth-free single-mode semiconductor laser suitable for monolithic integration based on pits mirror

et al. 2017

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, "Regrowth-free singlemode semiconductor laser suitable for monolithic integration based on pits mirror," Opt. Eng. Abstract. A regrowth-free single-mode laser that is made using standard UV photolithography is reported. The laser achieves a single-mode side-mode suppression ratio of 37 dB, linewidth of 450 kHz, and tunes across 2.9 nm and is suitable for monolithic integration as a distributed feedback replacement, due to a large free spectral range of 60 nm. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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“…It is commonly accepted that the fast crystallographic growth directions are usually also the fast crystallographic directions for dissolution. 48 According to, 49 these fast growth directions in Zn are <1100>, <1120>, and <0001> in the order of velocity. The schematic outline of the pore body in Zn pores is presented in Fig.…”

Section: J-t Characteristics During Etching and Single Loopmentioning

confidence: 99%

Self-Organized Growth of Crystallographic Macropores in Multicrystalline Zn by Nanoscale Sculpturing

Gerngroß

Baytekin-Gerngross

Carstensen

et al. 2018

J. Electrochem. Soc.

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The self-organized formation of crystallographically oriented macropores in multicrystalline Zn is presented in the present paper. These pores are obtained by pulsed-potential electrochemical etching in an aqueous KCl electrolyte. They exhibit the typical characteristics of crystallographically-oriented pores like growth along certain crystallographic directions, formation of pore domains, branching of pores, and intersections of pores, as observed for e.g. III-V semiconductors such as InP. The pore walls of the pores in Zn are entirely composed of metallic Zn unlike the amorphous metal oxide ones observed in other metals like Al (AAO) or Ti (TiO 2 ). The main pore growth direction in Zn is along <0001>. The branching of side pores occurs along [1210] and [1210] in 90 • angles from the root pore forming a pore geometry reminding remotely on a monkey puzzle tree. Because of their crystallographic nature of the pores they grow under various angles into the multicrystalline Zn surface depending on the underlying crystal orientation. Like this they form a perfectly suitable structure for mechanical interlocking with polymers. When filled with polymer, the root pores together with the branched side pores act as ideal hooks anchoring the polymer in Zn solving the well-known problem of poor adhesion of polymers and paint on Zn surfaces.

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Anisotropy in the wet-etching of semiconductors

Cited by 56 publications

References 40 publications

Laser Beam Machining, Laser Beam Hybrid Machining, and Micro-channels Applications and Fabrication Techniques

Laser Beam Machining, Laser Beam Hybrid Machining, and Micro-channels Applications and Fabrication Techniques

Regrowth-free single-mode semiconductor laser suitable for monolithic integration based on pits mirror

Self-Organized Growth of Crystallographic Macropores in Multicrystalline Zn by Nanoscale Sculpturing

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