Anisotropy of boron nitride thin-film reflectivity spectra by generalized ellipsometry

Schubert, M.; Rheinländer, B.; Franke, E.; Neumann, H.; Hahn, J.; Röder, M.; Richter, Frank

doi:10.1063/1.118701

Cited by 65 publications

(63 citation statements)

References 15 publications

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“…12 Such samples have already been studied by gVASE in the VIS spectral range, resulting in VIS optical constants. 7 It was found that the h-BN thin films possess an effective optical axis perpendicular to the sample surface. The microscopic c axes of the h-BN grains are more or less tilted by the same inclination angle ⌰ from the sample normal.…”

Section: Methodsmentioning

confidence: 99%

“…Depending on the growth conditions, the h-BN layer grain c axes show an average preferential orientation with respect to the film normal. 7 This average orientation varies as a function of the growth condition (U B ) as well. Some of the h-BN layers contain isotropic material with randomly oriented grain c axes.…”

Section: Methodsmentioning

confidence: 99%

“…This has been found recently for BN thin films deposited by magnetron sputtering from a study of the anisotropic polarized reflectance by generalized variable angle of incidence spectroscopic ellipsometry (gVASE) in the visible spectral range ͑VIS͒. 7 High c-BN content thin films are known to consist of pure nanocrystalline c-BN grains ͑average size: 10-30 nm͒ and sp 2 -bonded (h-BN͒ material at the grain boundaries. 4 They are also deposited after the growth of a noncubic BN nucleation layer.…”

Section: Introductionmentioning

confidence: 99%

“…This result led to the assumption of the conelike distribution of the microscopic grain c-axis orientations. 7 In this model the dielectric functions for polarization parallel ( e,eff ) and perpendicular ( o,eff ) to the thin-film normal then average between Ќ and ʈ according to Eqs. ͑2a͒ and ͑2b͒.…”

Section: A H-bn Dielectric Function Modelmentioning

confidence: 99%

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Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry using boron nitride as an example

et al. 1997

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Schubert, Mathias; Rheinlander, B.; Franke, E.; Neumann, H.; Tiwald, T. E.; and Woollam, John A., "Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry using boron nitride as an example" (1997 We present a microstructure-dependent anisotropic infrared-optical dielectric function model for mixedphase polycrystalline material from which we derive the transverse and longitudinal-optical modes observable in thin films. Infrared ellipsometry over the wavelength range from 700 to 3000 cm Ϫ1 is then used to determine the phase and microstructure of polycrystalline and multilayered hexagonal and cubic boron nitride thin films deposited by magnetron sputtering onto ͑100͒ silicon. The ellipsometric data depend on the thin-film multilayer structure, the layer-phase composition, and the average orientation of the hexagonal grain c axes. In particular, we demonstrate the existence of spectral shifts of longitudinal optical phonons as a function of microstructure, i.e., the average grain crystallographic orientation within the mixed-phase material. ͓S0163-1829͑97͒08244-1͔

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: A H-bn Dielectric Function Modelmentioning

confidence: 99%

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Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry using boron nitride as an example

et al. 1997

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“…Ex situ ellipsometry was recently used to determine the isotropic c-BN ͑e.g., at ϭ571 nm: n c ϭ2.1͒, and anisotropic h-BN ͑n e ϭ1.65, n o ϭ2.1͒ optical constants and thin-film layer structure of magnetron sputtered BN. [19][20][21] . It was observed that the h-BN and c-BN thin-film optical constants are very similar to their bulk values.…”

Section: ͑1͒mentioning

confidence: 99%

In situ ellipsometry growth characterization of dual ion beam deposited boron nitride thin films

Franke

Schubert

Woollam

et al. 2000

Journal of Applied Physics

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Pure hexagonal h, as well as mixed-phase cubic/hexagonal c/h boron nitride ͑BN͒ thin films were deposited onto ͓001͔ silicon substrates using the dual ion beam deposition technique. The BN thin films were grown under UHV conditions at different substrate temperatures and ion beam bombarding parameters. Thin-film growth was monitored using in situ spectroscopic ellipsometry at 44 wavelengths between 420 and 761 nm. The in situ ellipsometric ⌿ and ⌬ data were compared with two-layer growth model calculations for the mixed-phase c/h BN, and with one-layer growth model calculations for pure h-BN growth. In situ data provide information on the optical properties of deposited h-BN and c/h-BN material, film thickness, and BN growth rates. A virtual interface approach is employed for the optical properties of the silicon substrate. The growth and nucleation of c-BN observed here confirms the cylindrical thermal spike model. The results for composition and thickness of the BN films were compared to those obtained from ex situ infrared transmission measurements and high-resolution transmission electron microscopy investigations.

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Infrared Spectroscopic Ellipsometry

Röseler

Korte

2001

Handbook of Vibrational Spectroscopy

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The experimental and the evaluation methods of infrared ellipsometry are outlined. The results provide a highly reliable basis for further interpretation, for example, material properties or molecular orientation. Various applications demonstrate the scope of the method. Infrared ellipsometry is a reflection technique for determining the optical properties of a sample. It is advantageously employed to characterize layers down to nanometer thickness. The two experimental results obtained per spectral data point can be evaluated for the sample's optical constants (refractive and absorption index or the complex dielectric function) by strict application of optical theory. In addition, the layer thickness is available since it is independent of the wavelength and the generally applied interferometers cover a wide spectral interval. The evaluation can be extended to anisotropic optical properties.

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Anisotropy of boron nitride thin-film reflectivity spectra by generalized ellipsometry

Cited by 65 publications

References 15 publications

Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry using boron nitride as an example

Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry using boron nitride as an example

In situ ellipsometry growth characterization of dual ion beam deposited boron nitride thin films

Infrared Spectroscopic Ellipsometry

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