Anisotropy of synthetic diamond in catalytic etching using iron powder

Wang, Junsha; Long, Wei; Chen, Jing; Yan, Jiwang

doi:10.1016/j.apsusc.2015.04.022

Cited by 54 publications

(5 citation statements)

References 20 publications

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“…Finally, the diamond surface was corroded in a mixed high-temperature gas flow environment of hydrogen and nitrogen, and P-diamond abrasives were successfully prepared. Wang Junsha et al [ 14 , 15 , 16 ] also used corrosion methods to compare the differences in corrosion degree and morphology of diamond {100} and {111} crystal planes caused by corrosion agents such as Fe, Co, and Ni. They further explored and optimized the chemical reaction mechanism of these corrosion agents on M-diamond, thereby optimizing the corrosion process.…”

Section: Introductionmentioning

confidence: 99%

Material Removal Mechanism of SiC Ceramic by Porous Diamond Grinding Wheel Using Discrete Element Simulation

Zhang,

Xu,

Zhu

et al. 2024

Materials

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SiC ceramics are typically hard and brittle materials. Serious surface/subsurface damage occurs during the grinding process due to the poor self-sharpening ability of monocrystalline diamond grits. Nevertheless, recent findings have demonstrated that porous diamond grits can achieve high-efficiency and low-damage machining. However, research on the removal mechanism of porous diamond grit while grinding SiC ceramic materials is still in the bottleneck stage. A discrete element simulation model of the porous diamond grit while grinding SiC ceramics was established to optimize the grinding parameters (e.g., grinding wheel speed, undeformed chip thickness) and pore parameters (e.g., cutting edge density) of the porous diamond grit. The influence of these above parameters on the removal and damage of SiC ceramics was explored from a microscopic perspective, comparing with monocrystalline diamond grit. The results show that porous diamond grits cause less damage to SiC ceramics and have better grinding performance than monocrystalline diamond grits. In addition, the optimal cutting edge density and undeformed chip thickness should be controlled at 1–3 and 1–2 um, respectively, and the grinding wheel speed should be greater than 80 m/s. The research results lay a scientific foundation for the efficient and low-damage grinding of hard and brittle materials represented by SiC ceramics, exhibiting theoretical significance and practical value.

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Section: Introductionmentioning

confidence: 99%

Material Removal Mechanism of SiC Ceramic by Porous Diamond Grinding Wheel Using Discrete Element Simulation

Zhang,

Xu,

Zhu

et al. 2024

Materials

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“…In practical applications, such as diamond tools, diamond drill bits, and high flux heat sinks, diamond will inevitably contact ferrous materials, and reactions happen at the interfaces; thus understanding the underlying mechanism is crucial to altering the interfacial binding, connections, and device performance 11‐14 . Taking diamond and iron (Fe) interface as an example, it is reported that the interfacial reaction consists of two steps, that is, graphitization of diamond and subsequent diffusion of carbon atoms into Fe 15‐21 . The unpaired d ‐electrons of Fe interact with the sp 3 ‐hybridized electrons in carbon and shift the positions of carbon atoms, resulting in the transformation of diamond into graphite at the diamond–Fe interface at high temperature 18,22,23 .…”

Section: Introductionmentioning

confidence: 99%

“…[11][12][13][14] Taking diamond and iron (Fe) interface as an example, it is reported that the interfacial reaction consists of two steps, that is, graphitization of diamond and subsequent diffusion of carbon atoms into Fe. [15][16][17][18][19][20][21] The unpaired d-electrons of Fe interact with the sp 3 -hybridized electrons in carbon and shift the positions of carbon atoms, resulting in the transformation of diamond into graphite at the diamond-Fe interface at high temperature. 18,22,23 However, nongraphitization was also proposed for diamond-Fe reaction with the aid of molecular dynamic simulations.…”

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confidence: 99%

“…[15][16][17][18][19][20][21] The unpaired d-electrons of Fe interact with the sp 3 -hybridized electrons in carbon and shift the positions of carbon atoms, resulting in the transformation of diamond into graphite at the diamond-Fe interface at high temperature. 18,22,23 However, nongraphitization was also proposed for diamond-Fe reaction with the aid of molecular dynamic simulations. For instance, the dissociated carbon atoms on the diamond surface could diffuse into Fe, and no graphitization was observed above 1000 K. 15 Therefore, it is controversial for the formation of the graphite at the diamond-Fe interface.…”

mentioning

confidence: 99%

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Revealing the atomic mechanism of diamond–iron interfacial reaction

Ku,

Xu,

Yan

et al. 2023

Carbon Energy

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Diamond, with ultrahigh hardness, high wear resistance, high thermal conductivity, and so forth, has attracted worldwide attention. However, researchers found emergent reactions at the interfaces between diamond and ferrous materials, which significantly affects the performance of diamond‐based devices. Herein, combing experiments and theoretical calculations, taking diamond–iron (Fe) interface as a prototype, the counter‐diffusion mechanism of Fe/carbon atoms has been established. Surprisingly, it is identified that Fe and diamond first form a coherent interface, and then Fe atoms diffuse into diamond and prefer the carbon vacancies sites. Meanwhile, the relaxed carbon atoms diffuse into the Fe lattice, forming Fe3C. Moreover, graphite is observed at the Fe3C surface when Fe3C is over‐saturated by carbon atoms. The present findings are expected to offer new insights into the atomic mechanism for diamond‐ferrous material's interfacial reactions, benefiting diamond‐based device applications.

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“…3 Extensive data on anisotropic etching of diamond by carbide-forming elements -Fe subgroup metals (Fe, Co, Ni)have been collected over the past decade. 4 It was shown that the {100} planes etch faster than the {111} planes, while the etching rates of both sets of planes increase with temper-ature. It was also demonstrated that graphitization of diamond followed by diffusion of carbon into molten iron are the two main factors enabling the removal of carbon from the diamond surface.…”

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confidence: 99%

Selective growth of silver particles on the facets of synthetic diamond

Bokhonov

Kato

2016

CrystEngComm

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We have shown for the first time that simple annealing of silversynthetic diamond mixtures in air or oxygen at 600-700 °C leads to selective growth of silver particles on the {100} facets of diamond, while no growth is observed on the {111} facets.Annealing at a temperature higher than 750 °C results in significant morphological changes in the heterostructure: silver particles grow not only on the cube but also on the octahedral facets.

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Anisotropy of synthetic diamond in catalytic etching using iron powder

Cited by 54 publications

References 20 publications

Material Removal Mechanism of SiC Ceramic by Porous Diamond Grinding Wheel Using Discrete Element Simulation

Material Removal Mechanism of SiC Ceramic by Porous Diamond Grinding Wheel Using Discrete Element Simulation

Revealing the atomic mechanism of diamond–iron interfacial reaction

Selective growth of silver particles on the facets of synthetic diamond

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