Anisotropy of the electrongfactor in lattice-matched and strained-layer III-V quantum wells

Tuning the electrically evaluated electron Landégfactor in GaAs quantum dots and quantum wells of different well widths

“…[9][10][11][12][13]t h eg factor is shown to be strongly influenced by the quantum confinement in the GaAs QW and has an anisotropy with respect to the magnetic field direction. The origin of the well width dependence of the g factor is the penetration of the electron wave function into the AlGaAs barrier layer.…”

Electron g-factor and cyclotron effective mass in semiconductor quantum wells under growth-direction applied magnetic fields

“…On the other hand, experimental measurements of both the Landé g-factor and cyclotron effective mass provide an excellent tool for testing theoretical predictions of band-structure electronic calculations in low-dimensional semiconductor heterostructures. In that respect, in this study we present a theoretical model which is used to give a proper physical and quantitative explanation of a series of experiments involving quantum beats and optically detected cyclotron resonance (ODCR) techniques applied in the measurements of g-factors and cyclotron effective masses of semiconductor GaAs-Ga 1−x Al x As QWs under growth-direction applied magnetic fields [2][3][4][5].The Ogg-McCombe Hamiltonian, acting in the two-fold Γ 6c spin-degenerate conduction band of the bulk materials of the GaAs-Ga 1−x Al x As QW under an applied magnetic field parallel to the growth z-direction, is obtained within the effective-mass approximation and in fourth-order of k.p perturbation theory as [11][12][13][14][15][16][17][18] …”

“…This goal may be achieved by manipulating the electron g-factor in semiconductor heterostrucures and designing appropriate external gate control devices. The cyclotron effective mass and electronic g-factor are of importance in possible applications and in the interpretation of experimental data in specific research fields such as magneto-optical and magneto-transport studies, optically detected nuclear-resonance experiments, spin electronics and quantum beats measurements, and in the fractional and integer quantum Hall effects [2][3][4][5][6].…”

“…Techniques such as electron spin resonance, Hanle effect, spin quantum beats, spin flip Raman scattering experiments, and capacitance and energy spectroscopies [4][5][6][7][8][9][10] have been used to measure the electron g-factor in semiconductor systems. Lattice effects on the orbital contribution, quantumconfinement, and application of hydrostatic-pressure and external electric/magnetic fields may considerably modify the conduction-electron g-factor, in both magnitude and sign, in different semiconductor heterostructures.…”

“…The understanding of the physics of semiconductor single and multiple quantum wells (QWs), quantum-well wires (QWWs), quantum dots (QDs), and superlattices (SLs) has been of great interest, and several studies have been performed to elucidate the physical properties of these systems [1][2][3][4][5][6]. The possible use of electron spins in the architecture of a solid-state based quantum computer has raised special attention in the study of the behavior of the electron spin coupled with an external magnetic field.…”