Anisotropy of Thermomagnetic Effects in n‐Ge

Samoilovich, A. G.; Buda, I. S.; Dakhovskii, I. V.

doi:10.1002/pssb.19670230122

Cited by 8 publications

(4 citation statements)

References 6 publications

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“…In §2, we summarize i) the derivation of the anisotropic relaxation time from the linearized Boltzmann equation, first derived in ref. 13, ii) the derivation of ZT using the anisotropic relaxation time, 14,15) and iii) the derivation using CRTA. In §3, we analyze and discuss the thermoelectric properties of the anisotropic model as a function of the effective mass ratio.…”

Section: Introductionmentioning

confidence: 99%

Scattering Anisotropy Effect on Layered Thermoelectric Materials

Ikeda¹,

Yago²,

Matoba³

2007

jjap

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It is shown that a density of states (DOS) proportional to the excitation energy, a so-called polar-like DOS, can arise in odd-parity states, with the superconducting gap vanishing at points even though the spin-orbit interaction for Cooper pairing is strong. Such gap structures are realized in the nonunitary states, F 1u (1, i, 0), F 1u (1, ε, ε 2 ), and F 2u (1, i, 0), classified by Volovik and Gorkov (1985 Sov. Phys.-JETP 61 843). This is due to the gap vanishing in a quadratic manner around a point on the Fermi surface.

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Section: Introductionmentioning

confidence: 99%

Scattering Anisotropy Effect on Layered Thermoelectric Materials

Ikeda¹,

Yago²,

Matoba³

2007

jjap

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“…In these equations, the ionized impurity density and impurity charge are N + and Z, respectively. Note that F j is the Fermi-Dirac integral of order j To calculate an empirical correction that accounts for anisotropic ionized impurity mobility, the scattering rates in the longitudinal and transverse directions are assumed to be equal [32,33] and may be found using the SKD method [45]. This scattering rate incorporated in the Brooks-Herring treatment [32] results in equations (A.…”

Section: A4 Brooks-herring Methodsmentioning

confidence: 99%

“…The Brooks-Herring method can underestimate damping from ionized impurity scattering in semiconductors such as Si with non-spherical dispersion. Since determining an effective, isotropic ionized impurity mobility is difficult for materials with non-spherical dispersion, we implemented a mostlyempirical correction for n-Si by assuming that the scattering rates in the longitudinal and transverse directions are equal [33] and may be calculated using the SKD method [45]. With the SKD scattering rate, the anisotropic ionized impurity mobility can be calculated using the same procedure as the Brooks-Herring method [32].…”

Section: Correction For Anisotropic Ionized Impurity Scattering In Simentioning

confidence: 99%

Semiconductors for high selectivity thermal emitters

Doiron

Naik

2018

J. Opt.

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Selective emitters limit thermal radiation to a narrow spectral band enabling applications including energy conversion and sensing. While applications demand high spectral selectivity, the materials used for selective emitters limit the ultimate selectivity. At high temperatures (>600 K), the optical properties of materials degrade, resulting in poor spectral selectivity, and thus leaving an open question—what material platform makes a good selective thermal emitter? Here, we show that doped semiconductors make a good choice by predicting their temperature dependent optical constants in a wide doping range. We build semi-empirical models to predict the temperature dependences of microscopic processes in GaAs and Si, a polar and a non-polar semiconductor respectively, and demonstrate that semiconductors with small and tunable optical losses enable very high spectral selectivity in thermal emitters. Our predictions agree reasonably well with more complex and accurate methods such as variational and second order perturbation theories, and serve as a guide in the discovery and development of materials for high temperature nanophotonics.

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“…That is, h 1 i is expected to be the decreasing function of m 3 =m 1 . 8,13) However, this expectation fails awing to the following reason.…”

mentioning

confidence: 99%

Thermoelectric Figure of Merit of Anisotropic Bulk Materials in the Presence of Polar Optical Phonon Scattering

Ikeda¹,

Matoba²

2008

jjap

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The effect of mass anisotropy on the thermoelectric figure of merit in the presence of polar optical phonon (POP) scattering is numerically studied. Electron transport is considered using the linear Boltzmann transport equation. The mass anisotropy is advantageous for the figure of merit along the principal directions of a small effective mass if phonon thermal conductivity is large. Inelasticity plays an essential role in the obtained result. The result is qualitatively different from that for an ionised impurity model.

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Anisotropy of Thermomagnetic Effects in n‐Ge

Cited by 8 publications

References 6 publications

Scattering Anisotropy Effect on Layered Thermoelectric Materials

Scattering Anisotropy Effect on Layered Thermoelectric Materials

Semiconductors for high selectivity thermal emitters

Thermoelectric Figure of Merit of Anisotropic Bulk Materials in the Presence of Polar Optical Phonon Scattering

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