Annealing and crystallization of amorphous germanium thin films

Chik, K. P.; Lim, P. K.

doi:10.1016/0040-6090(76)90239-x

Cited by 30 publications

(11 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Ge‐rich ZrO 2 films (GeZrO x ) were deposited by MS and Ge ion implantation . Thin ZrO 2 films crystallize at higher temperatures than thin films of Ge . One would therefore expect that the formation of Ge nanocrystals within an amorphous matrix is possible.…”

Section: Influence Of Different Matrix Materialsmentioning

confidence: 99%

“…[157] Thin ZrO 2 films [158][159][160] crystallize at higher temperatures than thin films of Ge. [161][162][163][164] One would therefore expect that the formation of Ge nanocrystals within an amorphous matrix is possible. However, in the case of GeZrO x layers, Ge and ZrO 2 crystallize simultaneous at 650 C. [151,152] In order to increase the crystallization temperature of the matrix, the ZrO 2 was doped with tantalum.…”

Section: Zirconium Oxide and Zirconium-tantalum Oxidementioning

confidence: 99%

See 1 more Smart Citation

A Review on Ge Nanocrystals Embedded in SiO₂ and High‐k Dielectrics

Lehninger

Beyer

Heitmann

2018

Physica Status Solidi (a)

View full text Add to dashboard Cite

In this article, the work on Ge nanocrystals embedded in dielectric films formed by phase separation from supersaturated solid solutions is reviewed. Different methods to synthesize supersaturated solid solutions are covered, e.g., magnetron sputtering, ion implantation, and chemical vapor deposition. The phase separation is activated by subsequent high temperature annealing. Important parameters that influence the formation and properties of the Ge nanocrystals are discussed. Various matrix materials like SiO2, Al2O3, HfO2, HfAlOx, Lu2O3, ZrO2, TaZrOx, and Si3N4 are reported in the literature. The influence of the matrix on the formation and properties of the Ge nanocrystals is addressed in this review. Ge nanocrystals are investigated for applications such as charge storage nodes in nonvolatile memory devices or as silicon technology compatible light emitters. A key to establish these applications seems to be embedding the Ge nanocrystals in still amorphous matrices. This could help to avoid grain boundaries that act as leakage paths for electrical charges (unfavorable for nonvolatile memories) and facilitate defects, which could act as recombination centers (unfavorable for light emitters). A further important point is the synthesis of size and position controlled Ge nanocrystals. Both aspects are reviewed for Ge nanocrystals embedded in the mentioned matrix materials.

show abstract

Section: Influence Of Different Matrix Materialsmentioning

confidence: 99%

Section: Zirconium Oxide and Zirconium-tantalum Oxidementioning

confidence: 99%

A Review on Ge Nanocrystals Embedded in SiO₂ and High‐k Dielectrics

Lehninger

Beyer

Heitmann

2018

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…Recent investi gations have shown that amor phous Ge crystallizes in the range 300-400°C , and the re ported activation energies range from 1.4 eV -3. 5 eV (Barna , Barna and Pocza , 1972;Germain , Sque lard , Bour goin and Gheorghiu, 1975 ;Chik and Lim , 1975). Sinc e specimen c ontamination in evaporated samples has a str ong effect on the crystallization temperatur e and kinetics , special attention should be paid to results obtained from regrowth in amorphous Ge and Si la yer s produced by ion implantation of single crystals , since this technique produces very clean samples.…”

Section: Ntroductionmentioning

confidence: 99%

“…The proposals on the nat ure of this defect vary from monovaca ncies (Csepreg i , Kullen, Mayer and Sigrnon , 1977) , divacancies , to extended divacancies (Chik and Lim, 1975). The major problem in sorti ng out the exact nature of this defect is the lack of knowledge about the topology of the interface structure.…”

Section: Ntroductionmentioning

confidence: 99%

A structural model for the interface between amorphous and crystalline Si or Ge

Spaepen

1978

Acta Metallurgica

114

View full text Add to dashboard Cite

“…The structure can be described as a fourfold coordinated continuous network of covalently bonded Ge atoms without long range order 31 , 32 . The crystallization temperature is around 450 °C 33 – 35 depending on isothermal annealing time. Annealing at elevated temperatures below the crystallization limit may lead to diffusion controlled structural rearrangement processes termed structural relaxation 36 – 39 .…”

Section: Introductionmentioning

confidence: 99%

In-situ Measurement of Self-Atom Diffusion in Solids Using Amorphous Germanium as a Model System

Hüger

Strauß

Stahn

et al. 2018

Sci Rep

View full text Add to dashboard Cite

We present in-situ self-diffusion experiments in solids, which were carried out by Focussing Neutron Reflectometry on isotope multilayers. This new approach offers the following advantages in comparison to classical ex-situ measurements: (1) Identification and continuous measurement of a time dependence of diffusivities, (2) significant reduction of error limits of diffusivities, and (3) substantial reduction of the necessary experimental time. In the framework of a case study, yet unknown self-diffusivities in amorphous germanium are measured at various temperatures quasi-continuously, each during isothermal annealing. A significant decrease of diffusivities as a function of annealing time by one order of magnitude is detected that is attributed to structural relaxation accompanied by defect annihilation. In metastable equilibrium the diffusivities follow the Arrhenius law between 375 and 412 °C with an activation energy of Q = (2.11 ± 0.12) eV. The diffusivities are five orders of magnitude higher than in germanium single crystals at 400 °C, mainly due to the lower activation energy.

show abstract

Annealing and crystallization of amorphous germanium thin films

Cited by 30 publications

References 17 publications

A Review on Ge Nanocrystals Embedded in SiO₂ and High‐k Dielectrics

A Review on Ge Nanocrystals Embedded in SiO₂ and High‐k Dielectrics

A structural model for the interface between amorphous and crystalline Si or Ge

In-situ Measurement of Self-Atom Diffusion in Solids Using Amorphous Germanium as a Model System

Contact Info

Product

Resources

About

Annealing and crystallization of amorphous germanium thin films

Cited by 30 publications

References 17 publications

A Review on Ge Nanocrystals Embedded in SiO2 and High‐k Dielectrics

A Review on Ge Nanocrystals Embedded in SiO2 and High‐k Dielectrics

A structural model for the interface between amorphous and crystalline Si or Ge

In-situ Measurement of Self-Atom Diffusion in Solids Using Amorphous Germanium as a Model System

Contact Info

Product

Resources

About

A Review on Ge Nanocrystals Embedded in SiO₂ and High‐k Dielectrics

A Review on Ge Nanocrystals Embedded in SiO₂ and High‐k Dielectrics